• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.17-23
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• 2002

The more productive and stable fabrication can be obtained by applying chemical mechanical polishing (CMP) process to shallow trench isolation (STI) structure in 0.18 $\mu\textrm{m}$ semiconductor device. However, STI-CMP process became more complex, and some kinds of defect such as nitride residue, tern oxide defect were seriously increased. Defects like nitride residue and silicon damage after STI-CMP process were discussed to accomplish its optimum process condition. In this paper, we studied how to reduce torn oxide defects and nitride residue after STI-CMP process. To understand its optimum process condition, We studied overall STI-related processes including trench depth, STI-fill thickness and post-CMP thickness. As an experimental result showed that as the STI-fill thickness becomes thinner, and trench depth gets deeper, more tern oxide were found in the CMP process. Also, we could conclude that low trench depth whereas high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• Journal of the Korea Convergence Society
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• v.8 no.11
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• pp.15-20
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• 2017

Recently, with the development of the IT industry, interest in computer convergence technology is increasing in various fields. Especially, in the semiconductor field, a vision system that uses a camera and computer convergence is often used to inspect semiconductor device defects in the production process. Various systems have been studied to remove noise, which is a major cause of degradation in processing of data related to these image processing systems. In this paper, we try to detect defects in BGA (Ball Grid Array) package devices by recognizing defects in advance during mass production. We propose a measurement system using a Gaussian filter, a Median filter, and an Average filter, which are widely used for noise reduction of image data Applying the proposed system to the manufacturing process of the BGA package can be used to judge whether the defect is good or not, and it is expected that productivity will be improved.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.2
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• pp.190-195
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• 2009

This paper introduces experimental investigates of an electrical accident of the distributing cable termination with simulated a shoddy construction. We prepared two termination kites, one is built-in type, the other is heat contraction type. Also, we manufactured cable termination that have simulated defect by badness construction and investigated their insulation characteristics such as ac (35[kV], 1[min]) and impulse (95[kV], $1.2{\times}50[{\mu}s]$) withstand test. The influence of defects such as thickness decrease, the gap between stress-con of housing and semiconductor and heating time on insulating properties of the termination have been studied. The thickness decrease of an insulator decreases ac breakdown strength suddenly and the breakdown traces of the insulator that is damaged by knife displayed elliptic shape. The gap of between stress-con and semiconductor deteriorates dielectric strength of insulator seriously. In heat contraction type, the ac breakdown voltage became low when the heating time is short.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.102-103
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• 2008

Magnetron Sputtering, MOCVD, Thermal Evaporation에 의해 성장된 ZnO layer에 대한 Dependency Temperature Photoluminescence (PL)를 이용하여 비교 분석을 통해 Deep level emission에 대해 연구하였다. Sputter에 의해 성장된 ZnO 박막은 Violet, Green, Orange-red 영역의 $Zn_i$, $V_o$, $O_i$의 defect에 의한 Deep level emission을 보였고, MOCVD에 의해 성장된 박막은 비교적 산소양이 낮은 성장 조건에서는 blue-green 영역에서, 산소양이 높은 조건에서의 박막은 Orange-red 영역의 Deep level emission을 보였다. Blue-green 영역에서의 emission은 온도가 증가함에 따라 다른 Barrier를 보였는데, 이는 $V_{Zn}$와 $V_o$에 의한 것임을 알 수 있었다. 한편, ZnO nanorods는 $V_o$에 의한 Green 영역에서의 Deep level emission을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.11
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• pp.29-35
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• 2015

The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.