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http://dx.doi.org/10.5573/ieie.2015.52.11.029

Photo-response of Polysilicon-based Photodetector depending on Deuterium Incorporation Method  

Lee, Jae-Sung (Division of Green Energy Engineering. Uiduk University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.11, 2015 , pp. 29-35 More about this Journal
Abstract
The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.
Keywords
Metal-semiconductor-metal(MSM) photodetector; Polysilicon; Photo-response; Deuterium; Passivation;
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Times Cited By KSCI : 1  (Citation Analysis)
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