• 마이크로전자및패키징학회지
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• 제7권1호
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• 반도체디스플레이기술학회지
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• 제7권3호
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• pp.17-21
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• 2008

Application of flash memory in mobile and ubiquitous related devices is rapidly being increased due to its low price and high performance. In addition, some notebook computers currently come out into market with a SSD(Solid State Disk) instead of hard-drive based storage system. Regarding this trend, applications need to increase the storage capacity using multiple flash memory chips for larger capacity sooner or later. Flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its physical property. In order to make flash memory storage work with tangible performance, reclaiming of invalid regions needs to be controlled in a particular manner to decrease the number of erasures and to distribute the erasures uniformly over the whole memory space as much as possible. In this paper, we study the performance of flash memory recycling algorithms and demonstrate that the proposed algorithm shows acceptable performance for flash memory storage with multiple chips. The proposed cleaning method partitions the memory space into candidate memory regions, to be reclaimed as free, by utilizing threshold values. The proposed algorithm handles the storage system in multi-layered style. The impact of the proposed policies is evaluated through a number of experiments.

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.59-62
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• 2008

The Lifetime of OLEDs by ITO/glass substrates cleaning method and cathode deposition method were investigated in the fabrication of green light emitting OLEDs with $Alq_3$-C545T fluorescent system. In our experiments, the optimum cleaning method was obtained at last processing of boiling IPA(isopropyl alcohol). And the optimum deposition methode was obtained at 3 steps deposition rate of Al. The deposition rate of 3 steps progressed changing from $0.5\AA$/sec to $3\AA$/ sec. The green light emitting OLED with plasma treatment at 150W for 2 minutes showed the highest luminance and efficiency of 20000 cd/$m^2$ and 16 lm/W. On the contrary, the OLED device without plasma treatment showed much lower performance with the luminance and efficiency of 3500 cd/$m^2$ and 2 lm/W.

• Journal of Microbiology
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• 제38권2호
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• pp.99-104
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• 2000

Hydrogen peroxide has been used in cleaning the piping of an advanced high-purity water system that supplies ultra-high purity water (UHPW) for 16 megabyte DRAM semiconductor manufacturing. The level of hydrogen peroxide-resistant bacteria in UHPW water was monitored prior to and after disinfecting the piping with hydrogen peroxide. Most of the bacteria isolated after hydrogen peroxide disinfection were highly resistant to hydrogen peroxide. However, the percentage of resistant bacteria decreased with time. The hydrogen peroxide-resistant bacteria were identified as Micrococcus luteus, Bacillus cereus, Alcaligenes latus, Xanthomonas sp. and Flavobacterium indologenes. The susceptibility of the bacteria to hydrogen peroxide was tested as either planktonic cells or attached cells on glass. Attached bacteria as the biofilm on glass exhibited increased hydrogen peroxide resistnace, with the resistance increasing with respect to the age of the biofilm regrowth on piping after hydrogen peroxide treatment. In order to optimize the cleaning strategy for piping of the high-purity water system, the disinfecting effect of hydrogen preoxide and peracetic acid on the bacteria was evaluated. The combined use of hydrogen peroxide and peracetic acid was very effective in killing attached bacteria as well as planktonic bacteria.

• 한국가스학회지
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• 제15권3호
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• pp.74-78
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• 2011

반도체용 특수가스인 BF3는 반도체 생산공정에서 웨이퍼의 플라즈마 식각 공정과 화학증기증착(CVD : Chemical vapor deposition) chamber 세정공정 등에 사용되며, $BF_3$ 가스는 boron Ion Implant 공정에서 p-type doping을 위한 원료 등으로 사용된다. 본 연구에서는 간단한 공정으로 $NaBF_4$ 와 $KBF_4$의 열분해를 통하여 $BF_3$ 가스의 생산에 대해서 연구 하였다.

• 대한전자공학회논문지SD
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• 제46권10호
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• pp.25-30
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• 2009

오존을 이용하여 PR 박리에 사용된 에틸렌 카보네이트계 박리 세정제를 재이용할 수 있는 기술에 대하여 연구함으로써 향후 고성능-저가격의 반도체, LCD 제조에서의 PR 박리 및 세정 공정에 적용할 수 있는 핵심 공정기술을 확보하였다. 이 기술을 적용하면 반도체 웨이퍼 및 LCD 평판의 PR 박리 세정을 보다 빠르고 저렴한 비용으로 수행할 수 있으므로 반도체 및 LCD 제작공정의 생산성을 향상시킬 수 있다.

• 반도체디스플레이기술학회지
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• 제4권4호
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• pp.19-26
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• 2005

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

• 한국안전학회지
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• 제25권1호
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• pp.27-31
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• 2010

It is a well known fact that the LCD and Semiconductor Devices are a central part of IT industry which is important in the present and the future. But the biggest problem of Semiconductor and LCD manufacturing is maintaining a cleaning room environment. For this reason, the soft X-ray type Ionizer was used as the electrostatic reducer device, which protects damage of the product against electrostatic discharge in the manufacturing process. Therefore it is a essential important factor during Semiconductor and LCD production process. But the soft X-ray has a intrinsic problem with harmful to human being in case of soft X-ray exposure. That's reason we have the research to solve above problem and made an apparatus that it was covered with shielding structure to protect X-ray radiation to outside. And besides, it has a possibility to eliminate the charged electrostatic in the narrow space through the slot for Ion emissions with dual soft X-ray sources on the both side. It is also not make the particles from itself when it has been operated.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.1-6
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• 2014

In this study, to analyze characteristics of acoustic pressure for spot spray type megasonic, FEM analysis was performed for variable parameters based on the structure of commercial one. and 2 models of transmitter were designed and fabricated, and then acoustic pressure distribution(APD) of the transmitter was measured and compared to the commercial. The results of this experiment show that maximum acoustic pressure of model 1 was higher to 1.6 times compared to the commercial, and model 2 was higher to 1.23 times. Through the course of this study, design technology of transmitter has been developed by means of FEM analysis and experiment for characteristics of acoustic pressure. Also, it is expected to be useful in the development of high power spray type megasonic that is necessary with advance in semiconductor technology.

• 한국재료학회지
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• 제11권4호
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• pp.251-257
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• 2001

반도체 소자의 고집적화에 따른 세정공정 수는 점점 증가하고 있는 추세에 있다 현재 사용되는 세정은 다량의 화학약품 및 초순수를 소비하며, 고온에서 행하여지고 있는 RCA세정을 근간으로 하고 있다. 세정공정수의 증가는 바로 화학약품의 사용량 증가를 초래하게 되며, 이에 따른 환경문제가 심각하게 대두되고 있는 실정에 이르렀다. 따라서 이러한 화학약품 및 초순수 사용을 절감하고, 저온에서 세정공정이 이뤄지는 기술이 향후 요구되어 지고 있다. 이번 연구는 이러한 관점에서 화학약품 및 초순수 사용량을 줄이며, 상온 공정이 이뤄지는 전리수를 이용하여 실리콘 웨이퍼 세정을 하였다. 제조된 전리수는 산화성 성질을 지닌 양극수와 환원성 성질인 음극수로 이루어지고, 각각 pH 및 ORP는 4.7/+1050mV, 9.8/-750mV를 30분 이상 유지하고 있었다 전리수의 양극수에 의한 금속제거 효과가 음극수의 효과보다 우수함을 확인할 수 있었으며, 다양한 입자제거 실험에도 불구하고, 동일한 분포도를 나타내고 있었다.