• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.59-62
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• 2008

The Lifetime of OLEDs by ITO/glass substrates cleaning method and cathode deposition method were investigated in the fabrication of green light emitting OLEDs with $Alq_3$-C545T fluorescent system. In our experiments, the optimum cleaning method was obtained at last processing of boiling IPA(isopropyl alcohol). And the optimum deposition methode was obtained at 3 steps deposition rate of Al. The deposition rate of 3 steps progressed changing from $0.5\AA$/sec to $3\AA$/ sec. The green light emitting OLED with plasma treatment at 150W for 2 minutes showed the highest luminance and efficiency of 20000 cd/$m^2$ and 16 lm/W. On the contrary, the OLED device without plasma treatment showed much lower performance with the luminance and efficiency of 3500 cd/$m^2$ and 2 lm/W.

• Journal of Microbiology
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• v.38 no.2
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• pp.99-104
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• 2000

Hydrogen peroxide has been used in cleaning the piping of an advanced high-purity water system that supplies ultra-high purity water (UHPW) for 16 megabyte DRAM semiconductor manufacturing. The level of hydrogen peroxide-resistant bacteria in UHPW water was monitored prior to and after disinfecting the piping with hydrogen peroxide. Most of the bacteria isolated after hydrogen peroxide disinfection were highly resistant to hydrogen peroxide. However, the percentage of resistant bacteria decreased with time. The hydrogen peroxide-resistant bacteria were identified as Micrococcus luteus, Bacillus cereus, Alcaligenes latus, Xanthomonas sp. and Flavobacterium indologenes. The susceptibility of the bacteria to hydrogen peroxide was tested as either planktonic cells or attached cells on glass. Attached bacteria as the biofilm on glass exhibited increased hydrogen peroxide resistnace, with the resistance increasing with respect to the age of the biofilm regrowth on piping after hydrogen peroxide treatment. In order to optimize the cleaning strategy for piping of the high-purity water system, the disinfecting effect of hydrogen preoxide and peracetic acid on the bacteria was evaluated. The combined use of hydrogen peroxide and peracetic acid was very effective in killing attached bacteria as well as planktonic bacteria.

• Journal of the Korean Institute of Gas
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• v.15 no.3
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• pp.74-78
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• 2011

$BF_3$ gas has been used for semiconductor manufacturing process and applied in plasma etching, chemical vapor deposition, chamber cleaning processes etc,. $BF_3$ provides Boron and acts as a p-type doping in electrode in semiconductor. In this study, we investigate thermaldecomposition of alkali-boron complexes and suggest a simple way to produce $BF_3$ from $NaBF_4$ and $KBF_4$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.25-30
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• 2009

We have developed recycling technology of ethylen carbonate to use in photoresist stripping and cleaning process, which will be core processing technology for high performance and low price semiconductor and LCD fabrication. Using this technology, it is possible for semiconductor wafer and LCD planer to process more rapid and chip, and productivity will be improved.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.19-26
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• 2005

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

• Journal of the Korean Society of Safety
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• v.25 no.1
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• pp.27-31
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• 2010

It is a well known fact that the LCD and Semiconductor Devices are a central part of IT industry which is important in the present and the future. But the biggest problem of Semiconductor and LCD manufacturing is maintaining a cleaning room environment. For this reason, the soft X-ray type Ionizer was used as the electrostatic reducer device, which protects damage of the product against electrostatic discharge in the manufacturing process. Therefore it is a essential important factor during Semiconductor and LCD production process. But the soft X-ray has a intrinsic problem with harmful to human being in case of soft X-ray exposure. That's reason we have the research to solve above problem and made an apparatus that it was covered with shielding structure to protect X-ray radiation to outside. And besides, it has a possibility to eliminate the charged electrostatic in the narrow space through the slot for Ion emissions with dual soft X-ray sources on the both side. It is also not make the particles from itself when it has been operated.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.1-6
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• 2014

In this study, to analyze characteristics of acoustic pressure for spot spray type megasonic, FEM analysis was performed for variable parameters based on the structure of commercial one. and 2 models of transmitter were designed and fabricated, and then acoustic pressure distribution(APD) of the transmitter was measured and compared to the commercial. The results of this experiment show that maximum acoustic pressure of model 1 was higher to 1.6 times compared to the commercial, and model 2 was higher to 1.23 times. Through the course of this study, design technology of transmitter has been developed by means of FEM analysis and experiment for characteristics of acoustic pressure. Also, it is expected to be useful in the development of high power spray type megasonic that is necessary with advance in semiconductor technology.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.251-257
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case $NH_4$Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

• Particle and aerosol research
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• v.18 no.4
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• pp.129-136
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• 2022

The line width of circuits in semiconductor devices continues to decrease down to a few nanometers. Since nanoparticles attached to the patterned wafer surface may cause malfunction of the devices, it is crucial to remove the contaminant nanoparticles. Physical cleaning that utilizes momentum of liquid for detaching solid nanoparticles has recently been tested in place of the conventional chemical method. Dropwise impaction has been employed to increase the removal efficiency with expectation of more efficient momentum exchange. To date, most of relevant studies have been focused on drop spreading behavior on a horizontal surface in terms of maximum spreading diameters and average spreading velocity of drop. More important is the local liquid velocity at the position of nanoparticle, very near the surface, rather than the vertical average value. In addition, there are very scarce existing studies dealing with microdroplet impaction that may be desirable for minimizing pattern demage of the wafer. In this study, we investigated the local velocity distribution in spreading liquid film under various impaction conditions through the CFD simulation. Combining the numerical results with the particle removal model, we estimated an effective cleaning diameter (ECD), which is a measure of the particle removal capacity of a single drop, and presented the predicted ECD data as a function of droplet's velocity and diameter particularly when the droplets are microns in diameter.

• Electronics and Telecommunications Trends
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• v.35 no.4
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.