• 한국재료학회지
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• 제29권12호
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• pp.790-797
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• 2019

To improve photocatalytic performance, CdS nanoparticle deposited TiO₂ nanotubular photocatalysts are synthesized. The TiO₂ nanotube is fabricated by electrochemical anodization at a constant voltage of 60 V, and annealed at 500 for crystallization. The CdS nanoparticles on TiO₂ nanotubes are synthesized by successive ionic layer adsorption and reaction method. The surface characteristics and photocurrent responses of TNT/CdS photocatalysts are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-Vis spectrometer and LED light source installed potentiostat. The bandgaps of the CdS deposited TiO₂ photocatalysts are gradually narrowed with increasing of amounts of deposited CdS nanoparticles, which enhances visible light absorption ability of composite photocatalysts. Enhanced photoelectrochemical performance is observed in the nanocomposite TiO₂ photocatalyst. However, the maximum photocurrent response and dye degradation efficiency are observed for TNT/CdS30 photocatalyst. The excellent photocatalytic performance of TNT/CdS30 catalyst can be ascribed to the synergistic effects of its better absorption ability of visible light region and efficient charge transport process.

• 폴리머
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• 제36권3호
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• pp.332-337
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• 2012

본 연구는 약물의 용해도에 따른 서방성 용출 거동의 특성을 파악하기 위해 수행되었으며, 이에 따라 고분자의 입도에 따른 염산벤라팍신과 카바마제핀의 정제를 제조하였다. 사용된 고분자는 경구를 통한 서방성 약물전달 시스템 설계에 가장 널리 사용되는 히드록시 프로필 메틸셀룰로오스(HPMC)이며, HPMC의 입도 분포에 따른 팽윤 속도의 차이는 중요한 특성으로 약물의 용출에 큰 영향을 미친다. HPMC 입도에 따른 정제 표면을 분석하기 위해 SEM을 사용하였으며, 결정학적 특성을 파악하기 위해 DSC를 이용하여 분석하였고, 용출 특성의 주요 메카니즘을 파악하기 위해 용출 모델식을 적용하였다. 본 연구를 통해 약물의 용해도 및 HPMC의 입도에 따라 약물의 용출 거동을 조절할 수 있었다.

• 한국환경과학회지
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• 제17권9호
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• pp.981-992
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• 2008

This study examined how to produce new methods of copper (II) sulfate crystallization by using a small-scale chemistry tool such as small-scale reaction surface and petri dish. The making of copper(II) sulfate is included in the 5th grade elementary science textbooks. Various copper(II) compounds were reacted with a 2 M sulfuric acid solution. The result of this study is as follows: Seven small amounts of copper(II) compounds were reacted with a few drops of 2 M sulfuric acid solution at room temperature to make a copper(II) sulfate crystal of triclinic shape. Using the petri dish method, a copper(II) sulfate crystal could be identified within one hour of reacting copper(II) hydroxide, copper(II) carbonate, copper(II) nitrate, copper(II) perchlorate, cupric(II) formate from a few drops of 2 M sulfuric acid solution at room temperature. When using the lap top method for copper(II) perchlorate, cupric formate, a proper crystal could be identified within one hour as well. SSC methods were used for the first time to make a copper sulfate crystal via chemical reaction. We can make a copper(II) sulfate crystal using a simple method which is easier, safer and saves time in class. And since a small quantity of chemicals are being used in SSC chemical methods, waste is greatly reduced. This lessens the amount of environmental problems caused by the experiment. This can be helpful in preserving nature. In addition the cost of chemical and laboratory equipment is greatly reduced because it uses material that we find in our daily lives. There will be continued study of small-scale methods such as improvement of new programs, study and training of teachers, and securing SSC tools. I would like to suggest such as SSC methods are applicable in elementary School Science. I would like it to become a wide spread program.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.173-176
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• 2004

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 한국결정성장학회지
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• 제12권3호
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• pp.126-132
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• 2002

$ZrOCl_2{\cdot}8H_2O$ 수용액과 KOH 수용액의 반응으로부터 얻은 침전물을 $100^{\circ}C$에서 24 시간 동안 숙성시켜 정방정상 지르코니아를 제조한 후 수열합성 조건을 변화시킴으로써 비등방성 형상의 나노 결정형 지르코니아 분말을 합성하였다. 수열합성 시 반응온도와 반응시간이 증가할수록 정방정상인 구형 입자는 감소하고 상대적으로 단사정상 spindle-like 입자와 막대상 입자가 증가하였다. NaOH 용액의 농도가 증가함에 따라 입성장과 함께 정방정상에서 단사정상으로의 상전이가 촉진되었으며, 저온에서 반응시간이 짧은 경우 합성한 분말들은 반응초기에 응집된 입자들이 NaOH 용액에 부분적으로 용해되면서 응집입자 및 결정입자 크기가 감소되어 비표면적이 증가하였다가 반응시간이 길어지고 반응온도가 높아짐에 따라 입성장에 의하여 점차 비표면적이 감소하였다.

• 한국세라믹학회지
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• 제41권3호
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• pp.229-234
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• 2004

수계슬러리의 동결건조 공정을 이용하여 배향성 기공을 갖는 NiO-YSZ 지지체를 제조하였다. 슬러리의 동결과정에서 형성된 얼음 결정은 진공건조 과정을 거치면서 승화되어 그 자리에 기공을 형성하였으며. 열전달 방향과 속도를 조절함으로써 얼음결정의 성장을 제어할 수 있음을 알 수 있었다. 제조된 NiO-YSZ 지지체는 배향성을 가진 거대(macro) 기공과 함께 표면에는 미세기공이 존재하는 독특한 기공구조를 형성하였다. 이것은 동결과정에 있어서 성형체의 위치에 따라 얼음의 성장속도가 다르기 때문에 발생하는 현상으로 생각된다. 얻어진 다공체 표면에 YSZ 슬러리를 dip 코팅하여 막을 형성한 후 140$0^{\circ}C$에서 동시소성(co-firing)하여 다공성 NiO-YSZ 지지체의 표면에 치밀한 YSZ 막이 코팅된 bilayer 제조에 성공하였다.

• 한국세라믹학회지
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• 제47권4호
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• pp.343-352
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• 2010

A zirconia gel/polymer hybrid nanofiber was produced in a nonwoven fabric mode by electrospinning a sol derived from hydrolysis of zirconium butoxide with a polyvinyl butyral. Results indicated that the hydroxyl groups on the vinyl alcohol units in the backbone of the polymer were involved in the hydrolysis as well as grafting the hydrolyzed zirconium butoxide. In addition, use of acetic acid as a catalyst resulted in further hydrolysis and condensation in the sol, which led to the growth of -Zr-O-Zr- networks among the polymer chains. These networks gradually transformed into a crystalline zirconia structure upon heating. The as-spun fiber was smooth but partially wrinkled on the surface. The average fiber diameter was $690{\pm}110\;nm$. The fiber exhibited a strong but broad blue photoluminescence with its maximum intensity at a wavelength of ~410 nm at room temperature. When the fiber was heat-treated at $400^{\circ}C$, the fiber diameter shrunk to $250{\pm}60\;nm$. Nanocrystals which belonged to a tetragonal zirconia phase and were ~5 nm in size appeared. A strong white photoluminescence was observed in this fiber. This suggests that oxygen or carbon defects associated with the formation of the nanocrystals play a role in generating the photoluminescence. Further heating to $800^{\circ}C$ resulted in a monoclinic phase beginning to form In the heat-treated fibers, coloring occurred but varied depending on the heating temperature. Crystallization, coloring, and phase transition to the monoclinic structure influenced the photoluminescence. At $600^{\circ}C$, the fiber appeared to be fully crystallized to a tetragonal zirconia phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.