Study of Post Excimer Laser Annealing effect on Silicide Mediated Polycrystalline Silicon.

실리사이드 매개 결정화된 다결정 실리콘 박막의 후속 엑시머 레이저 어닐링 효과에 대한 연구

  • Choo, Byoung-Kwon (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
  • Park, Seoung-Jin (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
  • Kim, Kyung-Ho (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
  • Son, Yong-Duck (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
  • Oh, Jae-Hwan (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
  • Choi, Jong-Hyun (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
  • Jang, Jin (Advanced Display Research Center and Department of Physics, Kyung Hee University)
  • 추병권 (경희대학교 차세대 디스플레이 연구 센터) ;
  • 박성진 (경희대학교 차세대 디스플레이 연구 센터) ;
  • 김경호 (경희대학교 차세대 디스플레이 연구 센터) ;
  • 손용덕 (경희대학교 차세대 디스플레이 연구 센터) ;
  • 오재환 (경희대학교 차세대 디스플레이 연구 센터) ;
  • 최종현 (경희대학교 차세대 디스플레이 연구 센터) ;
  • 장진 (경희대학교 차세대 디스플레이 연구 센터)
  • Published : 2004.05.06

Abstract

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

Keywords