• Title/Summary/Keyword: SPICE simulation

검색결과 285건 처리시간 0.019초

SPICE를 사용한 3D NAND Flash Memory의 Channel Potential 검증 (The Verification of Channel Potential using SPICE in 3D NAND Flash Memory)

  • 김현주;강명곤
    • 전기전자학회논문지
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    • 제25권4호
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    • pp.778-781
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    • 2021
  • 본 논문에서는 SPICE를 사용한 16단 3D NAND Flash memory compact modeling을 제안한다. 동일한 structure와 simulation 조건에서 Down Coupling Phenomenon(DCP)과 Natural Local Self Boosting(NLSB)에 대한 channel potential을 Technology Computer Aided Design(TCAD) tool Atlas(SilvacoTM)와 SPICE로 simulation하고 분석했다. 그 결과 두 현상에 대한 TCAD와 SPICE의 channel potential이 매우 유사한 것을 확인할 수 있었다. SPICE는 netlist를 통해 소자 structure를 직관적으로 확인할 수 있다. 또한, simulation 시간이 TCAD에 비해 짧게 소요된다. 그러므로 SPICE를 이용하여 3D NAND Flash memory의 효율적인 연구를 기대할 수 있다.

Stretched-Exponential 형태의 문턱전압 이동 모델의 SPICE구현 (Implementation of Stretched-Exponential Time Dependence of Threshold Voltage Shift in SPICE)

  • 정태호
    • 반도체디스플레이기술학회지
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    • 제19권1호
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    • pp.61-66
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    • 2020
  • Threshold voltage shift occurring during operation is implemented in a SPICE simulation tool. Among the shift models the stretched-exponential function model, which is frequently observed from both single-crystal silicon and thin-film transistors regardless of the nature of causes, is selected, adapted to transient simulation, and added to BSIM4 developed by BSIM Research Group at the University of California, Berkeley. The adaptation method used in this research is to select degradation and recovery models based on the comparison between the gate and threshold voltages. The threshold voltage shift is extracted from SPICE transient simulation and shows the stretched-exponential time dependence for both degradation and recovery situations. The implementation method developed in this research is not limited to the stretched-exponential function model and BSIM model. The proposed method enables to perform transient simulation with threshold voltage shift in situ and will help to verify the reliability of a circuit.

CMOS 이미지센서 SPICE 회로 해석을 위한 포토다이오드 및 픽셀 모델링 (Photo Diode and Pixel Modeling for CMOS Image Sensor SPICE Circuit Analysis)

  • 김지만;정진우;권보민;박주홍;박용수;이제원;송한정
    • 전자공학회논문지 IE
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    • 제46권4호
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    • pp.8-15
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    • 2009
  • 본 논문은 CMOS 이미지센서 SPICE 회로 해석을 위한 포토다이오드 및 픽셀 모델링을 나타내었다. 소자 시뮬레이터인 메디치(Medici)를 이용하여 입사광의 세기에 따른 광전류 특성을 확보하고 SPICE 시뮬레이션에서 활용하기 위한 SPICE용 포토 다이오드 모델을 개발하였다. 그리고 그 결과를 검증하기 위하여 포토다이오드와 NMOS로 구성된 시험용 회로구조에 대한 메디치(Medici)의 mixed mode 시뮬레이션 결과와 SPICE 시뮬레이션 결과를 비교하였다.

Technology Computer-Aided Design과 결합된 SPICE를 통한 금속-강유전체-반도체 전계효과 트랜지스터의 전기적 특성 해석 (Electrical analysis of Metal-Ferroelectric - Semiconductor Field - Effect Transistor with SPICE combined with Technology Computer-Aided Design)

  • 김용태;심선일
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.59-63
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    • 2005
  • 금속-강유전체-반도체 전계효과 트랜지스터 (MFS/MFISFET)의 동작 특성을 technology computer-aided design (TCAD)과 simulation program with integrated circuit emphasis (SPICE)를 결합하여 전산모사하는 방법을 제시하였다. 복잡한 강유전체의 동작 특성을 수치해석을 이용하여 해석한 다음, 이를 이용하여 금속-강유전체-반도체 구조에서 반도체 표면에 인가되는 표면 전위를 계산하였다. 계산된 TCAD 변수인 표면 전위를 전계효과 트랜지스터의 SPICE 모델에서 구한 표면 전위와 같다고 보고게이트 전압에 따른 전류전압 특성을 구할 수 있었다. 이와 같은 방법은 향후 MFS/MFISFET를 이용한 메모리소자의 집적회로 설계에 매우 유용하게 적용될 수 있을 것이다.

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유기박막 트랜지스터에서 문턱전압 이동의 모델링 및 시뮬레이션 (Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors)

  • 정태호
    • 한국전기전자재료학회논문지
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    • 제26권2호
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    • pp.92-97
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    • 2013
  • In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.

능동픽셀센서 구동회로의 SPICE 모사 분석 (Characterization of Active Pixel Switch Readout Circuit by SPICE Simulation)

  • 남형진
    • 반도체디스플레이기술학회지
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    • 제6권2호
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    • pp.49-52
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    • 2007
  • Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.

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New Approach for Transient Radiation SPICE Model of CMOS Circuit

  • Jeong, Sang-Hun;Lee, Nam-Ho;Lee, Jong-Yeol;Cho, Seong-Ik
    • Journal of Electrical Engineering and Technology
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    • 제8권5호
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    • pp.1182-1187
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    • 2013
  • Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

과도방사선에 의한 CMOS 소자 Latch-up 모델 연구 (A Study of CMOS Device Latch-up Model with Transient Radiation)

  • 정상훈;이남호;이민수;조성익
    • 전기학회논문지
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    • 제61권3호
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    • pp.422-426
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    • 2012
  • Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

SPICE를 이용한 직류서보전동기 속도제어시스템의 해석 (SPICE Based Analysis of a DC Servo Motor Speed Control System)

  • 민인규;유상규;장성수;박영진;홍순찬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 A
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    • pp.455-458
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    • 1994
  • This paper deals with the analysis of a DC servo motel speed control system with PI-controller using the SPICE, which was developed as n simulation program for electronic circuits. The system including PI-controller is needed to be modelled for SPICE analysis. The system is divided to motor part, power conversion part, and control part for effective simulations. The overall system is reconstructed by using the above models and the steady-state and transient state are analyzed through SPICE simulations. The simulation results are verified by comparing with the results obtained by conventional simulations.

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SPICE를 이용한 Forward DC-DC 콘버어터 해석 (An Analysis of Forward DC-DC Converter Using SPICE Program)

  • 김희준;안태영;이영선
    • 전자공학회논문지B
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    • 제28B권5호
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    • pp.411-420
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    • 1991
  • In this paper, SPICE program which is widely used in analysis of general circuit on electronic and electrical field has been applied to DC-DC converter. We have selected Forward type which is widely used us SMPS(Switched Mode Power Supply) of various electronic equipments, and have confirmed the waveforms of circuit operation, transfer of energy and resetting in transformer. And the procedure which the output voltage of converter, including the control circuit, has been stabilized from the transient state to the steady state by controlling the duty ratio of switch is presented. We have compared SPICE simulation with experiment and have verified the validity of SPICE simulation.

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