• Journal of the Korea Society of Computer and Information
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• v.9 no.3
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• pp.1-6
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• 2004

there needs a new Geographic information system development Technology of the abstraction, encapsulation, modulation and hierarchy using Graphic representation of object modeling Technique. The method is based on composite object of Graphic data with the hierarchy concepts and abstraction of Graphic information in order to improve data abstraction of the graphic data file and described concept of multiple inheritance and classification that supports a wide variety of graphic class such as mesh unit, layer. segment and so on. in simple case of software development using SPICE model and object modeling techniques. this thesis suggested object representation of Graphic data which can reduce software development life cycle and the cost of software maintenance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.347-352
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• 1998

In this paper, the extraction and optimization of SPICE parameters on SONOSFET for NVSM circuit design were discussed. SONOSFET devices with different channel widths and lengths were fabricated using conventional 1.2 um n-well CMOS process. And, electric properties for dc parameters and capacitance parameters were measured on wafer. SPICE parameters for the SONOSFET were extracted from the UC Berkeley level 3 model for the MOSFET. And, local optimization of Ids-Vgs curves has carried out in the bias region of subthreshold, linear, saturation respectively. Finally, the extracted SPICE parameters were optimized globally by comparing drain current (Ids), output conductance(gds), transconductance(gm) curves with theoretical curves in whole region of bias conditions. It is shown that the conventional model for the MOSFET can be applied to the SONOSFET modeling except sidewalk effect.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.38-45
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• 2000

In this paper, an approach of modeling the optical interconnection system by SPICE simulation is presented. SPICE simulations with equivalent circuit models for optical devices are performed in a stable manner. From the simulated results, eye diagrams for receiver output and BER are obtained. Timing jitter due to laser diode turn-on delay effects can be found under various bias conditions. Using this approach, various system parameters such as bit rate, BER, dissipated transmitter power, and bias conditions can be optimized. It is expected that this approach will find useful applications such as Gigabit Ethernet and ATM.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.19-21
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• 2002

Electroded lamps operated at a high enough frequency can usually be modeled for the purpose of ballast design, as a resistor. Electrodeless fluorescent lamps include other components such as the arc tube's inductance. But that's impedance is small and so will be neglected in this paper. So, electrodeless fluorescent lamps is modeled as a resistor. A SPICE compatible model was developed for an electrodeless fluorescent lamp(OSRAM SYLVANIA ICETRON/ENDURA 150W).

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.111-114
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• 2000

Single Electron Transistor Logic (SETL) can be characterized by HSPICE simulation using a SPICE macro model. First, One unit SET is characterized by Monte-carlo simulation and then we fit SPICE macro-modeling equations to its characteristics. Second, using this unit SET, we simulate the transient characteristics of two-input NAND gate in both the static and dynamic logic schemes. The dynamic logic scheme shows more stable operation in terms of logic-swing and on/off current ratio. Also, there is a merit that we can use the SET only as current on-off switch without considering the voltage gain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.154-159
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• 2015

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

• ETRI Journal
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• v.34 no.4
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• pp.633-636
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• 2012

A dynamic analysis of an amorphous silicon (a-Si) thin film transistor liquid crystal display (TFT-LCD) pixel is presented using new a-Si TFT and liquid crystal (LC) capacitance models for a Simulation Program with Integrated Circuit Emphasis (SPICE) simulator. This dynamic analysis will be useful when predicting the performance of LCDs. The a-Si TFT model is developed to accurately estimate a-Si TFT characteristics of a bias-dependent gate to source and gate to drain capacitance. Moreover, the LC capacitance model is developed using a simplified diode circuit model. It is possible to accurately predict TFT-LCD characteristics such as flicker phenomena when implementing the proposed simulation model.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.59-63
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• 2005

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.7-12
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• 2010

We have developed a SPICE compatible model of thermoelectric devices, and a parameter extracting technique only by electrical and temperature measurement by using Harman method was proposed. The proposed model and parameter extraction technique do not require experimental data from thermal conductivity measurements. The maximum error between extracted parameters extracted by proposed method and conventional method was about 14%, which is not a severe mismatch for real application. The proposed model is applicable to design of both for thermoelectric coolers and thermo electric generators.