Browse > Article
http://dx.doi.org/10.4313/JKEM.2015.28.3.154

Simulation Method of Temperature Dependent Threshold Voltage Shift in Metal Oxide Thin-film Transistors  

Kwon, Seyong (Department of Electronics Engineering, Seoul National University of Science and Technology)
Jung, Taeho (Department of Electronics Engineering, Seoul National University of Science and Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.3, 2015 , pp. 154-159 More about this Journal
Abstract
In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.
Keywords
Threshold voltage shift; Metal oxide thin-film transistor; Modeling; SPICE;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 K. J. Yang and D. Y. Yoon, Korean Chem. Eng. Res., 48, 737 (2010).
2 T. Jung, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 341 (2013).
3 H. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Solid-State Electronics, 47, 2261 (2003).   DOI   ScienceOn
4 H. L. Gomes, P. Stallinga, F. Dinelli, M. Murgia, F. Biscarini, D. M. D. Leeuw, M. Muccini, and K. Mllen, Polym. Adv. Technol., 16, 227 (2005).   DOI
5 S. C. Deane, R. B. Wehrspohn, and M. J. Powell, Phys. Rev. B, 58, 19 (1998).   DOI
6 T. Jung, Proc. 6th Int. Conf. on Convergence and Hybrid Information Technology (eds. G. Lee, D. Howard, J. J. Kang, and D. Slezak) (ICHIT 2012, Daejeon, Korea, 2012) p. 453.
7 S. C. Deane, R. B. Wehrspohn, and M. J. Powell, Phys. Rev. B, 58, 12625 (1998).   DOI
8 D. Gupta, S. H. Yoo, C. H. Lee, and Y. T. Hong, IEEE Trans. on Electron Devices, 58, 1995 (2011).   DOI
9 M. J. Powell, C. van Berkel, I. D. French, and D. H. Nicholls, Appl. Phys. Lett., 51, 1242 (1987).   DOI
10 F. R. Libsch and J. Kanicki, Appl. Phys. Lett., 62, 1286 (1993).   DOI