• Proceedings of the Korea Water Resources Association Conference
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• 2005.05b
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• pp.792-796
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• 2005

The methods of times series analysis have been recognized as important tools for assisting in solving problems related to the management of water resources. Especially, After more than 40 years the so-called Hurst effect remains an open problem in stochastic hydrology. Until now, its existence has been explained fly R/S analysis that roots in early work of the British hydrologist H.E. Hurst(1951). Today, the Hurst analysis is mostly used for the hydrological studies for memory and characteristics of time series and many methodologies have been developed for the analysis. So, there are many different techniques for the estimation of the Hurst exponent(H). However, the techniques can produce different characteristics for the persistence of a time series each other. We found that DFA is the most appropriate technique for the Hurst exponent estimation for both the shot term memory and long term memory. We analyze the SOI(Southern Oscillations Index) and 6 tree-ring series for USA sites by means of DFA and the BDS statistic is used for nonlinearity test of the series. From the results, we found that SOI series is nonlinear time series which has a long term memory of H=0.92. Contrary to earlier work of Rao(1999), all the tree- ring series are not random from our analysis. A certain tree ring series show a long term memory of H=0.97 and nonlinear property. Therefore, we can say that the SOI and tree-ring series may show long memory and nonlinearity.

• Journal of Korea Water Resources Association
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• v.39 no.12 s.173
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• pp.997-1012
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• 2006

We have presented a nonparametric stochastic approach for the SOI(Southern Oscillation Index) series that used nonlinear methodology called Nonlinear AutoRegressive(NAR) based on conditional kernel density function and CAFPE(Corrected Asymptotic Final Prediction Error) lag selection. The fitted linear AR model represents heteroscedasticity, and besides, a BDS(Brock - Dechert - Sheinkman) statistics is rejected. Hence, we applied NAR model to the SOI series. We can identify the lags 1, 2 and 4 are appropriate one, and estimated conditional mean function. There is no autocorrelation of residuals in the Portmanteau Test. However, the null hypothesis of normality and no heteroscedasticity is rejected in the Jarque-Bera Test and ARCH-LM Test, respectively. Moreover, the lag selection for conditional standard deviation function with CAFPE provides lags 3, 8 and 9. As the results of conditional standard deviation analysis, all I.I.D assumptions of the residuals are accepted. Particularly, the BDS statistics is accepted at the 95% and 99% significance level. Finally, we split the SOI set into a sample for estimating themodel and a sample for out-of-sample prediction, that is, we conduct the one-step ahead forecasts for the last 97 values (15%). The NAR model shows a MSEP of 0.5464 that is 7% lower than those of the linear model. Hence, the relevance of the NAR model may be proved in these results, and the nonparametric NAR model is encouraging rather than a linear one to reflect the nonlinearity of SOI series.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.353-359
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• 2022

This study investigated via computational analysis the application utility of series-cascaded ring resonators based on silicon-on-insulator (SOI) slot optical waveguides in integrated optical biochemical sensors. The radii of the two rings in the series-cascaded ring resonators were 59.4 ㎛ and 77.6 ㎛ respectively, and the coupling distance was 0.5 ㎛. The series-cascaded ring resonators were computationally analyzed using FIMMProp and PICWave numerical software. The free spectral range (FSR), full width at half maximum (FWHM), sensitivity, and quality-factor (Q-factor) of the series-cascaded ring resonators were 12.2 nm, 0.134 nm, 4100 nm/RIU, and 11580, respectively, and the measurement range was calculated to be slightly smaller than 3×10^-3 RIU. Although the measurement range was smaller than that of the single ring resonator, upon considering other characteristic parameters, the series-cascaded ring resonators are found to be more effective as integrated sensors than single ring resonators.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.6
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• pp.303-306
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• 2001

STFR were fabricated on the floating membrane which was formed by SOI-micromachining process. The floating membranes having a thickness range of $3{\sim}15{\mu}m$ could be simply formed by micromachining the directly-bonded and thinned SOI substrate. The STFR device fabricated on the $15{\mu}m$-thick membrane showed resonance frequency of fr = 1.65 GHz, coupling coefficient of Keff2 = 2.4 %, and series and parallel quality factors of Qs = 91.7 and Qp = 87.7, respectively.

• Journal of Korea Water Resources Association
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• v.38 no.6 s.155
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• pp.439-448
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• 2005

This paper introduces the wavelet transform that was improved by the fourier transform to assess periodicities and trends, we assessed propriety with examples of two monthly precipitation data, annual precipitation, SOI index and SST index. The wavelet transform can effectively assess the power spectrum corresponding to frequency as maintaining chronological characteristics. The results of the analysis using the wavelet transform showed that the monthly precipitation have the strongest power spectrum near that of 1 year, and the annual precipitation represent the dominated spectrum in the band of 2-8 years. Also, the SOI index and SST index indicate the strongest power spectrum in the band of 2-8 years.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.4B
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• pp.355-362
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• 2006

Several techniques of MK test, Spearman's Rho test, Linear Regression test, CUSUM test, Cumulative Deviation, Worsley Likelihood Ratio test, Rank Sum test, and Students' t test were applied to detect the trends of slope and shift which exist in hydrologic and climate time series. The time series of annual rainfall, inflow, tree ring index, and southern oscillation index (SOI) were used and the trends of these series were compared in the study. From the results, it can be found that the data could be classified into two categories such as linear trend and shift. 4 series data of 8 rainfall series which reveal the trend show the shift and 8 series data of 18 tree ring index and March and April series of monthly SOI data show shift. Moreover, ADF test and BDS test were used to test stationarity and non-linearity of the data. In conclusion, through the study, various trend analysis techniques were compared and 6 kinds of characteristics which can exist in hydrologic time series were identified.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.473-481
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• 2012

For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

• Journal of IKEEE
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• v.20 no.3
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• pp.279-284
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• 2016

This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.2
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• pp.189-194
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• 2018

Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.