1 |
Lim H. Fossum J. R., "Threshold Voltage of Thin-Film Silicon-on-Insulator (SOI) MOSFET's", IEEE Trans. Electron Devices, vol. 30, no. 10, pp. 1244, 1983.
DOI
ScienceOn
|
2 |
Veeraghavan S. and Fossum J. G., "Short-channel effects in SOI MOSFET's", IEEE Trans. Electron Devices, vol. 36, no. 3, pp. 522, 1989.
DOI
ScienceOn
|
3 |
R. H. Yan, A. Ourmazd, K. F. Lee, "Scaling the Si MOSFET: from bulk to SOI to bulk," IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1704-1710, 1992.
DOI
ScienceOn
|
4 |
P. Francis, A. Terao, D. Flandre, F. Van de Wiele, "Modeling of ultrathin double-gate nMOS/SOI transistors," IEEE Trans. Electron Devices, vol. 41, no. 5, pp. 715-720, 1994.
DOI
ScienceOn
|
5 |
T. C. Hsiao, J. C. S. Woo, "Subthreshold characteristics of fully depleted submicrometer SOI MOSFET's," IEEE Trans. Electron Devices, vol. 42, no. 6, pp. 1120-1125, 1995.
DOI
ScienceOn
|
6 |
K. K. Young, "Short-channel effects in fully depleted SOI MOSFET's," IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 399-402, 1989.
DOI
ScienceOn
|
7 |
J. C. S. Woo, K. W. Terrill, P. K. Vasudev, "Two-dimensional analytical modeling of very thin SOI MOSFET's," IEEE Trans. Electron Devices, vol. 37, no. 9, pp. 1999-2000, 1990.
DOI
ScienceOn
|
8 |
Joachim H., Yamaguchi Y., Ishikawa K., Inoue Y., and Nishimura T., "Simulation Two-Dimensional analytical modeling of sub-threshold slope in ultrathin-film SOI MOSFET's down to 0.1 gate length", IEEE Trans. Electron Devices, vol. 40, no. 10, pp. 1812, 1993.
DOI
ScienceOn
|
9 |
S. R. Banna, P. C. H. Chan, P. K. Ko, C. T. Nguyen, and M. Chan, "Threshold Voltage Model for Deep-Submicrometer Fully Depleted SOI MOSFET's," IEEE Trans. Electron Devices, vol. 42, no. 11, pp. 1949-1955, 1995.
DOI
ScienceOn
|
10 |
J. Y. Guo, C. Y. Wu, "A new 2D analytical threshold-voltage model for fully depleted shortchannel SOI MOSFET's," IEEE Trans. Electron Devices, vol. 40, no. 9, pp. 1653-1661, 1993.
DOI
ScienceOn
|
11 |
K. Suzuki, Y. Tosaka, T. Sugii, "Analytical threshold voltage model for short channel doublegate MOSFET's," IEEE Trans. Electron Devices, vol. 43, no. 7, pp. 1166-1168, 1996.
DOI
ScienceOn
|
12 |
R. Zhang, K. Roy, "Low-Power high-performance Double-Gate Fully Depleted SOI Circuit Design," IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 852-862, 2002.
DOI
ScienceOn
|
13 |
K. M. Chang, H. P. Wang, "A simple 2D analytical threshold voltage model for fully depleted shortchannel silicon-on-insulator MOSFET's," Semi-con Sci. Tech, vol. 19, no. 12, pp. 1397-1405, 2004.
DOI
ScienceOn
|
14 |
G. Katti, N. DasGupta, and A. DasGupta, "Threshold Voltage Model for Mesa-Isolated Small Geometry Fully Depleted SOI MOSFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 51, no. 7, pp. 1169-1177, 2004.
DOI
ScienceOn
|
15 |
Wenwei Yang, Zhiping Yu, Lilin Tian, "Scaling Theory for FinFETs Based on 3-D Effects Investigation", IEEE Trans. Electron Devices, vol. 54, no. 5, 2007.
|
16 |
C. H. Suh, "Analytical model for deriving the threshold voltage of a short gate SOI MESFET with vertically non-uniformly doped silicon film", IET Circuits, Devices, and Systems, vol. 4, Iss. 6, pp. 525-530, 2010.
DOI
ScienceOn
|
17 |
Romain Ritzenthaler, Francois Lime, Olivier Faynot, Sorin Cristoloveanu, Benjamin Ininguez, "3D analytical modeling of subthreshold characteristics in vertical Multiple-gate FinFET transistors", Solid-State Electronics, 2011.
|
18 |
Krishna Meel, R. Gopal, Deepak Bhatnagar, "Three-dimensional analytical modelling of front and back gate threshold voltages small geometry Fully Depleted SOI MOSFETs," Solid-State Electronics, vol. 62, pp. 174-184, 2011.
DOI
ScienceOn
|
19 |
C. H. Suh, "A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET," Solid-State Electronics, vol. 52, pp. 1249-1255, 2008.
DOI
ScienceOn
|
20 |
C. H. Suh, "Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET", Journal of Semiconductor Technology and Science, vol. 11, no. 2, pp. 111-120, 2011.
DOI
ScienceOn
|