• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.411-412
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• 2000

Si nanocrstallites on p-tyre (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532 and 1064 nm. The base vacuum in the chamber was down to $10^{-5}$ Torr and the pressure of the gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystallites have been annealed at $N_2$ gas. Nitrogen have been used as ambient gases. Strong blue and green luminescence from Si nanocrystallites has been observed in room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355-1064 nm

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 춘계학술대회논문집
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• pp.430-433
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• 2003

This paper presents a system identification (SI) scheme in time domain using measured acceleration data. The error function is defined as the time integral of the least square errors between the measured acceleration and the calculated acceleration by a mathematical model. Damping parameters as well as stiffness properties of a structure are considered as system parameters. The structural damping is modeled by the Rayleigh damping in SI. The regularization technique is applied to alleviate the ill-posed characteristics of inverse problems. The validity of the proposed method is demonstrated by an experimental study on a shear building model.

• Bulletin of the Korean Chemical Society
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• 제33권11호
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• pp.3576-3580
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• 2012

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.

• 한국결정학회지
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• 제9권1호
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• pp.44-47
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• 1998

가정용 2.45GHz 마이크로파 오븐을 사용하여 A1 금속분말과 SiO2 분말간에 SHS방법에 의하여 산화/환원 반응을 통한 Al2O3 분말과 Si분말간의 복합체를 얻을 수 있었다. 분말간의 반응을 일으키기 위한 온도까지 승온시키기 위하여는 SiC 분말을 susceptor로 이용한 마이크로파 복합가열(Microwave Hybrid Heating)방법을 사용하여 분당 100℃의 승온 속도로 가열하였으며 반응은 850℃ 근처에서 일어났으며 가열 속도는 반응이 시작되면서 분당 200℃ 이상의 온도상승이 일어나면서 원하는 반응을 얻을 수 있었다.

• Journal of Electrochemical Science and Technology
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• 제9권1호
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• pp.51-59
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• 2018

Various Si-Fe-Al ternary alloys were prepared with the same amount of Si by the melt spinning technique. The feasibility of the capacity prediction approach based on the estimation of the active amount of Si using the phase diagram was practically examined and reported. These predictions were verified by the electrochemical test of fabricated coin cells and other characterization methods. The capacity prediction approach using the phase diagram might be a fundamental and efficient method to accelerate the practical application of Si-based alloys as the anode material for Li-ion batteries. The details on the prediction procedure were discussed.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.616-621
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• 2009

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• 한국분말재료학회지
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• 제1권1호
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• pp.42-51
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• 1994

6061Al-SiCP metal matrix composite materials(MMCs) were fabricated by injecting SiCP particles directly into the atomized spray. The main attraction of this technique is the rapid fabrication of semi-finished, composite products in a combined atomization, particulate injection(10 $\mu\textrm{m}$, 40 $\mu\textrm{m}$, SiCP) and deposition operation. Conclusions obtained are as follows; The microstructure of the unreinforced spray formed 6061Al alloy consisted of relatively fine(50 $\mu\textrm{m}$) equiaxed grains. By comparision, the microstructure of the I/M materials was segregated and consisted of relatively coarse(150 $\mu\textrm{m}$) grains. The probability of clustering of SiCP particles in co-sprayed metal matrix composites increased it ceramic particle size(SiCP) was reduced and the volume fraction was held constant. Analysis of overspray powders collected from the spray atomization and deposition experiments indicated that morphology of powders were nearly spherical and degree of powders sphercity was deviated due to composite with SiCp particles. Interfacial bonding between matrix and ceramics was improved by heat treatment and addition of alloying elements(Mg). Maximum hardness values [Hv: 165 kg/mm2 for Al-10 $\mu\textrm{m}$ SiCp Hv--159 kg/mm2 for Al-40 $\mu\textrm{m}$SiCp] were obtained through the solution heat treatment at $530^{\circ}C$ for 2 hrs and aging at $178^{\circ}C$, and there by the resistance were improved.

• 한국표면공학회지
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• 제37권3호
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.