Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Study on the Luminescence of Si Nanocrystallites on Si Substrate Fabricated by Changing the Wavelength of Pulsed laser deposition

펄스레이저 증착법의 레이저 파장변환에 의한 실리콘 나노결정의 발광특성 연구

  • Kim, Jong-Hoon (Department of Electronic and Electrical Engineering, Yonsei Univ.) ;
  • Bae, Sang-Hyuck (Department of Electronic and Electrical Engineering, Yonsei Univ.) ;
  • Lee, Sang-Yeol (Department of Electronic and Electrical Engineering, Yonsei Univ.)
  • 김종훈 (연세대학교 전기전자공학과) ;
  • 배상혁 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2000.11.25
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Abstract

Si nanocrstallites on p-tyre (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532 and 1064 nm. The base vacuum in the chamber was down to $10^{-5}$ Torr and the pressure of the gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystallites have been annealed at $N_2$ gas. Nitrogen have been used as ambient gases. Strong blue and green luminescence from Si nanocrystallites has been observed in room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355-1064 nm

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