Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2010.05a
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- Pages.27.2-27.2
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- 2010
Selective fabrication and etching of vertically aligned Si nanowires for MEMS
- Kar, Jyoti Prakash ;
- Moon, Kyeong-Ju ;
- Das, Sachindra Nath ;
- Kim, Sung-Yeon ;
- Xiong, Junjie ;
- Choi, Ji-Hyuk ;
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Lee, Tae-Il
;
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Myoung, Jae-Min
- Published : 2010.05.13
Abstract
In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at