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http://dx.doi.org/10.5012/bkcs.2012.33.11.3576

Influence of SiO2 Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures  

Kim, Hyunsu (Department of Materials science and Engineering, Inha University)
Jin, Changhyun (Department of Materials science and Engineering, Inha University)
Park, Sunghoon (Department of Materials science and Engineering, Inha University)
Lee, Chongmu (Department of Materials science and Engineering, Inha University)
Publication Information
Bulletin of the Korean Chemical Society / v.33, no.11, 2012 , pp. 3576-3580 More about this Journal
Abstract
Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.
Keywords
Nanostructures; GaS; $SiO_2$; Core-shell structure; Photoluminescence;
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