• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• Journal of The Korean Astronomical Society
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• v.47 no.6
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• pp.293-302
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• 2014

Simultaneous time monitoring observations of $H_2O$ $6_{16}-5_{23}$, SiO J = 1-0, 2-1, 3-2, and $^{29}SiO$ ${\upsilon}=0$, J = 1-0 lines are carried out in the direction of the Mira variable star TX Cam with the Korean VLBI Network single dish radio telescopes. For the first time, the $H_2O$ maser emission from TX Cam is detected near the stellar velocity at five epochs from April 10, 2013 (${\phi}=3.13$) to June 4, 2014 (${\phi}=3.89$) including minimum optical phases. The intensities of $H_2O$ masers are very weak compared to SiO masers. The variation of peak antenna temperature ratios among SiO ${\upsilon}=1$, J = 1-0, J = 2-1, and J = 3-2 masers is investigated according to their phases. The shift of peak velocities of $H_2O$ and SiO masers with respect to the stellar velocity is also investigated according to observed optical phases. The $H_2O$ maser emission occurs around the stellar velocity during our monitoring interval. On the other hand, the peak velocities of SiO masers show a spread compared to the stellar velocity. The peak velocities of SiO J = 2-1, and J = 3-2 masers show a smaller spread with respect to the stellar velocity than those of SiO J = 1-0 masers. These simultaneous observations of multi-frequencies will provide a good constraint for maser pumping models and a good probe for investigating the stellar atmosphere and envelope according to their different excitation conditions.

• Korean Journal of Materials Research
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• v.19 no.3
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• pp.137-141
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• 2009

Density functional theory was utilized to investigate the growth of an indium nanowire on a Si (001) buckled surface. A site between the edge of two Si dimers is most favorable when the first In atom is adsorbed on the surface at an adsorption energy level of 2.26 eV. The energy barriers for migration from other sites to the most favorable site are low. When the second In atom is adsorbed next to the first In atom to form an In dimer perpendicular to the Si dimer row, the adsorption energy is the highest among all adsorption sites. The third In atom prefers either of the sites next to the In dimer along the In dimer direction. The fourth In atom exhibited the same tendency showed by the second atom. The second and fourth In adsorption energy levels are higher than the first and third levels as the In atoms consume the third valence electron by forming In dimers. Therefore, the In nanowire grows perpendicular to the Si dimer row on the Si (001) surface, as it satisfies the bonding of the three valence electrons of the In atoms.

• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.327-338
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• 2004

XRD studies on annealed Na-feldspar (Amelia albite) at $1100^{\circ}C$ showed rapid structural changes due to Si-Al disordering, which resulted in phase transformations from low albite to high albite by 4-days annealing test. TEM SAED analyses on the annealed samples revealed a trend of structural changes, but estimation of the structural state was difficult due to a large deviation of the SAED data. Optimum conditions of CBED analyses on albite was established by employing a cooling specimen holder, 120 kV of acceleration voltage, 37 Jim of condenser aperture size and 25 nm of spot size. A proper orientation showing distinct changes of HOLZ lines corresponding to the structure changes of albite turned out to be close to the [418] direction with $-1.2^{\circ}$ tilting, where the width of two HOLZ lines in low albite was opposite to those in high albite.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.235-241
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• 1997

The crystallinity and the structure of heteroepitaxially grown $Y_2O_3$ films on the silicon substrates deposited by Ultra High Vacuum Ionized Cluster Beam(UHV-ICB) were investigated by Back-scattering Spectroscopy(BS)/channeling. The channeling minimum values, $X_{min}$, of the $Y_2O_3$ films deposited by other methods were 0.8~0.95 up to the present, which indicates amorphous or highly polycrystalline nature of the $Y_2O_3$ films. On the contrary, the channeling minimum value of heteroepitaxially grown $Y_2O_3$ films on Si(100) and Si(111) deposited by UHV-ICB are 0.28 and 0.25 respectively. These results point out fairly good crystalline quality. It is also observed that the top region of $Y_2O_3$ films have less crystalline defects than the bottom region regardless of the crystal direction of the Si substrates. The axis of $Y_2O_3$<111> epitaxially grown on Si(111) is tilt by $0.1^{\circ}$ with respect to Si<111>. That of $Y_2O_3$<110> on Si(100) is parallel to the Si<001>. The $Y_2O_3$ film on Si(100) grew with single domain structure and that on Si(111) grew with double domain structure. From the result of oxygen resonance BS/channeling, the oxygen atoms in heteroepitaxially grown $Y_2O_3$ film on Si(111) substrate have the crystallinity, but that on Si(100) shows almost channeling amorphous state.

• Journal of the Mineralogical Society of Korea
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• v.16 no.3
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• pp.233-243
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• 2003

Microstructures and chemistry of anorthoclase, a high-temperature phase of alkali feldspars, were studied using EPMA and TEM. BSE images of anorthoclase displayed mixtures of Na-rich areas and K-rich areas forming lamella of various sizes. EPMA analysis indicated that the Na-rich area is composed of Ab: 81%, Or: 3% and An: 11% in average, while the K-rich area is composed of Ab: 45%, Or: 44% and An: 11 % in average. TEM analysis revealed albite with Albite twins in the Na-rich area, contrasting to mixtures of albite with fine Albite twins and orthoclase without twins, forming regular lamella of about 100 nm sizes, in the K-rich area. The [001] electron diffraction pattern of the K-rich area also indicated coexistence of the two phases. While streaking parallel to the (010)$^{*}$ direction appeared only in albite due to the twin structure, streaking parallel to the $(100)^{ *}$ direction appeared both in albite and orthoclase, probably due to strain on the interface as well as order-disorder phenomena of Al and Si. It is suggested that the reverse orientation of albite and orthoclase is caused by pole switching to reduce strain on their interfaces. Based on these observations and analyses, the mineral studied is identified as lower-temperature cryptoperthite rather than high-temperature anorthoclase, which has a midium degree of Al-Si ordering and $400^{\circ}C$∼$600^{\circ}C$ of estimated temperatures for the microstructure formation.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• International Journal of Naval Architecture and Ocean Engineering
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• v.10 no.5
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• pp.583-595
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• 2018

Stiffened panels are widely used in naval architecture and ocean engineering, and knowledge about their dynamic behaviour represents important issue in the design procedure. Ordinary vibration analysis consists of natural frequencies and mode shapes determination and can be extended to forced response assessment, while the Structural Intensity (SI) analysis, assessing magnitude and direction of vibrational energy flow provides information on dominant transmission paths and energy distribution including sink positions. In this paper, vibrational energy flow in stiffened panels under harmonic loading is analyzed by the SI technique employing the finite element method. Structural intensity formulation for plate and beam element is outlined, and developed system combining in-house code and general finite element tool is described. As confirmed within numerical examples, the developed tool enables separation of SI components, enabling generation of novel SI patterns and providing deeper insight in the vibrational energy flow in stiffened panels, comparing to existing works.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.101-105
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• 2007

We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.