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http://dx.doi.org/10.5012/bkcs.2004.25.4.480

Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor  

Sung, Myung M. (Department of Chemistry, Kookmin University)
Kim, Chang G. (Advanced Materials Division, Korea Research Institute of Chemical Technology)
Kim, Yun-Soo (Advanced Materials Division, Korea Research Institute of Chemical Technology)
Publication Information
Bulletin of the Korean Chemical Society / v.25, no.4, 2004 , pp. 480-484 More about this Journal
Abstract
$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.
Keywords
Metal organic chemical vapor deposition; $LiGaO_2$; Single precursor; GaN;
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