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http://dx.doi.org/10.4313/JKEM.2007.20.2.101

Properties of Silicon Nanowires grown by RFCVD  

Kim, Jae-Hoon (원광대학교 반도체.광 디스플레이학부)
Lee, Hyung-Joo (원광대학교 반도체.광 디스플레이학부)
Shin, Seok-Seung (원광대학교 반도체.광 디스플레이학부)
Kim, Ki-Young (원광대학교 반도체.광 디스플레이학부)
Go, Chun-Soo (원광대학교 반도체.광 디스플레이학부)
Kim, Hyun-Suk (차세대 방사선산업기술 지역혁신센터)
Hwang, Yong-Gyoo (원광대학교 반도체.광 디스플레이학부)
Lee, Choong-Hun (원광대학교 반도체.광 디스플레이학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.2, 2007 , pp. 101-105 More about this Journal
Abstract
We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.
Keywords
Silicon nanowires; SiNWs; Field emission; RFCVD(Radio frequency chemical vapor deposition);
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