Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.02a
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- Pages.221-221
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- 2013
Newly Synthesized Silicon Quantum Dot-Polystyrene Nanocomposite Having Thermally Robust Positive Charge Trapping
- Dung, Mai Xuan (Department of Chemistry, Chonnam National University) ;
- Choi, Jin-Kyu (Department of Chemistry, Chonnam National University) ;
- Jeong, Hyun-Dam (Department of Chemistry, Chonnam National University)
- Published : 2013.02.18
Abstract
Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-