• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.38-43
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• 1998

An analytical model for the surface field distribution of the RESURF (reduced surface field)LD(lateral double-diffused) MOS is presented in terms of the doping concentration, the thickness of the n epi layer, the p substrate concentration, and the epi layer length. The reuslts are used to determine the breakdown voltage due to the surface field as a function of the epi layer length. The maximum breakdown voltage of the device is found to be that of the vertical n$^{+}$n$^{[-10]}$ p$^{[-10]}$ junction. Analytical results of the breakdown voltage vs. the epi layer length agree well with the numerical simulation results using MEDICI.I.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.176-176
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• 2003

강자성 반도체(DMS)는 반도체에 전이금속을 doping함으로써 반도체의 전자 수송 특성과 전이 금속 이온에 의한 자기적 특성을 동시에 발현할 수 있도록 설계된 물질로서 '스핀 전자공학'의 구현을 위해 현재 활발히 연구되고 있는 분야이다. 특히 높은 전기 전도도와 투명 광 특성을 가지는 ZnO계는 전이금속을 첨가 할 경우 상온에서도 강자성 특성을 보일 것이라는 연구가 발표 된 이후 큰 주목을 받고 있으며, 실제로 Tc가 상온 이상인 결과들이 최근 발표되고 있다. 그러나 PLD에 의해 증착 된 Co-doped ZnO 경우 강자성 물성의 재현성이 아주 낮은 것으로 알려져 있는 둥 강자성 발현의 기원이 아직도 명확히 규명되지 못한 상태이다. 이에 본 연구에서는 Co-doped ZnO 계의 강자성 발현의 기원을 밝히고자 고상 반응법을 이용하여 다결정계를 제조한 후 X-선 회절 분석과 Raman 분광법을 이용하여 제2차상의 존재 유무 및 Co 이온의 치환 정도를 분석하였다. 다음으로 방사광 EXAFS 분석을 행하여 ZnO내에서의 Co 이온의 원자가 상태를 분석하고, PPMS를 사용 M-T curve를 측정/분석함으로써 강자성 발현의 기원을 규명하고자 하였다.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1996.04a
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• pp.215-215
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• 1996

The present study examined chronic effects of transient focal cerebral ischemia on the substantia nigra, a remote exofocal area, using immunohistochenmical and receptor autoradiographic techniques. Transient focal cerebral ischemia was induced by middle cerebral artery (MCA) occlusion for 60 or 90 min followed by reperfusion using silicone-coated 4-0 nylon monofilament in male Wistar rats. After 1- or 2-week reperfusion following transient MCA occlusion, there were partial losses of tyrosine hydroxylase-immunoreactive dopaminergic neurons, incieases in glial fibrillary acidic protein-immunoreactive cells (gliosis), decreases in [$^3$H]YM-09151-2 binding for dopamine D$_2$ receptors, and marked atrophy in the ipsilateral substantia nigra. The precise mechanism(s) of exofocal damage to the substantia nigra is remained to be elucidated.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.337-342
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• 2001

PDP(Plasma Display Panel)용 녹색 형광체인 Zn$_2$SiO$_4$:Mn에 채-dopant로 Al을 첨가하여 졸-겔법으로 합성하였다. 졸-겔법으로 제조한 형광체는 기존의 고상 반응에 의해 합성된 경우보다 낮은 온도(1000-110$0^{\circ}C$)에서 Zn$_2$SiO$_4$단일상을 형성하였으며, 300-500nm의 비교적 균일한 입자를 얻을 수 있었다. 또한, co-dopant인 Al을 첨가함으로써 발광휘도를 향상시키고, 전광시간을 줄일 수 있었다. 한편, TEOS의 가수분해시 $H_2O$/TEOS 비율을 조절하여 발광의 최적 조건을 조사하였다.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.737-739
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• 1992

The microstructure and humidity sensitive characteristics of $V_2O_5$ doped $CaTiO_3$ were studied. Sensing elements were prepared in bulk form. This element exhibits a porous structure. The grain grows and electrical conductivity increases as doping amount of $V_2O_5$ increases. The change of impedance and capacitance under different r.h is remarkable, and the conduction carriers of this element were ions.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1255-1259
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• 2013

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.179-180
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• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for rj/Wpp${\leq}0.3$ and with numerical results for rj/Wpp${\geq}0.3$ within 1 % error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

• Advances in materials Research
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• v.3 no.2
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• pp.117-128
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• 2014

Processable conducting polyaniline derivative with free amine functional groups was successfully synthesized from the monomer o-phenylenediamine in aqueous hydrochloric acid medium using ammonium persulfate as an oxidative initiator. The synthesized poly(o-phenylenediamine) (PoPD) in critical condition was found to be completely soluble in common organic solvents like dimethyl sulfoxide, N,N-dimethyl formamide etc. From the intrinsic viscosity measurement, the optimum condition for the polymerization was established. The polymer was characterized by ultraviolet visible spectroscopy, Fourier transform infrared spectroscopy, proton magnetic resonance spectroscopy ($^1HNMR$) and thermogravimetric (TGA) analyses. The weight average molecular weights of the synthesized polymers were determined by the dynamic light scattering (DLS) method. From the spectroscopic analysis the structure was found to resemble that of polyaniline derivative with free amine functional groups attached to ortho/meta position in the phenyl ring. However, very little ladder unit was also present with in the polymer chain. The moderate thermal stability of the synthesized polymer could be found from the TGA analysis. The average DC conductivity of $2.8{\times}10^{-4}S/cm$ was observed for the synthesized polymer pellet after doping with hydrochloric acid.

• Journal of the Korean Magnetic Resonance Society
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• v.3 no.2
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• pp.90-99
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• 1999

Doping of boron atoms in graphite has been well known method to increase the discharge capacity as the negative electrode material for lithium secondary battery. Herein, the boron-doped graphites are prepared by mixing 1, 2.5, 5, and 7 wt. % of boron carbide in carbon during the graphitizing process. The structural states of boron in boron-doped graphites are investigated by solid-state 11B NMR spectroscopy. The resonance lines for substitutional boron atoms are identified as the second order quadrupolar powder pattern with the quardrupole coupling constant, QCC = 3.36(2) MHz. The quantitative analysis of 11B NMR spectra with boron-doped graphite has also been performed via simulation.