Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A theoretical study on the breakdown voltage of the RESURF LDMOS

RESURE LDMOS의 항복전압에 관한 이론적인 고찰

  • 한승엽 (아주대학교 정보전자기술연구소) ;
  • 정상구 (아주대학교 전자공학부)
  • Published : 1998.08.01
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Abstract

An analytical model for the surface field distribution of the RESURF (reduced surface field)LD(lateral double-diffused) MOS is presented in terms of the doping concentration, the thickness of the n epi layer, the p substrate concentration, and the epi layer length. The reuslts are used to determine the breakdown voltage due to the surface field as a function of the epi layer length. The maximum breakdown voltage of the device is found to be that of the vertical n$^{+}$n$^{[-10]}$ p$^{[-10]}$ junction. Analytical results of the breakdown voltage vs. the epi layer length agree well with the numerical simulation results using MEDICI.I.

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