• Korean Journal of Materials Research
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• v.9 no.9
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• pp.878-882
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• 1999

Structural properties of $Al_xGa_1-_xN$ epilayers grown on (0001) sapphire substrate by plasma induced molecular beam epitaxy are investigated in the range of AlN molar fraction from 0.16 to 0.76. The AlN molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron microscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlGaN epilayers on AlN molar fraction imply that the epitaxial growth of $Al_xGa_1-_xN$ layers with variation of AlN molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of $Al_xGa_1-_xN$ epilayer changes from roundish to coalesced one with increasing AlN molar fraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1187-1194
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• 2003

A BCl$_3$/Ne plasma chemistry was used to etch Ga-based (GaAs, AIGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a Planar Inductively Coupled Plasma (ICP) reactor. The addition of the Ne instead of Ar can minimize electrical and optical damage during dry etching of III-V semiconductors due to its light mass compared to that of Ar All of the materials exhibited a maximum etch rate at BCl$_3$ to Ne ratios of 0.25-0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to relatively high volatilities of their trichloride etch products (boiling point CaCl$_3$ : 201 $^{\circ}C$, AsCl$_3$ : 130 $^{\circ}C$, PCl$_3$: 76 $^{\circ}C$) compared to InCl$_3$ (boiling point : 600 $^{\circ}C$). We obtained low root-mean-square(RMS) roughness of the etched sulfate of both AIGaAs and GaAs, which is quite comparable to the unetched control samples. Excellent etch anisotropy ( > 85$^{\circ}$) of the GaAs and AIGaAs in our PICP BCl$_3$/Ne etching relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask. However, the surfaces of In-based materials are somewhat degraded during the BCl$_3$/Ne etching due to the low volatility of InCl$_{x}$./.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.193-198
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• 2012

In this study, we have fabricated the polymer insulator and diamond-like carbon (DLC) thin films by using plasma enhanced chemical vapor deposition methods. we fabricated the DLC films with various thicknesses as the passivation layer on plasma polymer and investigated the structural, physical, and electrical properties of DLC/plasma polymer films. The plasma polymer synthesized in this work had the low leakage current and low dielectric constant. The values of hardness and elastic modulus in DLC/plasma polymer films are increased, and the value of rms surface roughness is decreased, and contact angle value is increased with increasing DLC film thickness. In the electrical properties of DLC/plasma polymer, the value of the dielectric constant is increased, however the leakage current property of the DLC/plasma polymer is improved than that of plasma polymer film with increasing DLC film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.315-320
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• 2020

Methylammonium lead iodide (MAPbI₃) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI₂) and lead bis (dipivaloylmethanate) [Pb(dpm)₂] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI₂ precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI₃ thin films degraded into the PbI₂ phase. In contrast, for the Pb(dpm)₂ precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)₂ is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI₃ thin films were successfully grown on glass substrates using Pb(dpm)₂. The rms (root-mean-square) roughness of MAPbI₃ thin films formed from Pb(dpm)₂ was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI₂. The grain size of the films formed from Pb(dpm)₂ was as large as approximately 350 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.533-538
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• 2003

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• Asian-Australasian Journal of Animal Sciences
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• v.25 no.9
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• pp.1237-1247
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• 2012

The objective of this study was to evaluate the predictions of dry matter intake (DMI) and average daily gain (ADG) of Vietnamese Yellow (Vang) purebred and crossbred (Vang with Red Sindhi or Brahman) bulls fed under Vietnamese conditions using two levels of solution (1 and 2) of the large ruminant nutrition system (LRNS) model. Animal information and feed chemical characterization were obtained from five studies. The initial mean body weight (BW) of the animals was 186, with standard deviation ${\pm}33.2$ kg. Animals were fed ad libitum commonly available feedstuffs, including cassava powder, corn grain, Napier grass, rice straw and bran, and minerals and vitamins, for 50 to 80 d. Adequacy of the predictions was assessed with the Model Evaluation System using the root of mean square error of prediction (RMSEP), accuracy (Cb), coefficient of determination ($r^2$), and mean bias (MB). When all treatment means were used, both levels of solution predicted DMI similarly with low precision ($r^2$ of 0.389 and 0.45 for level 1 and 2, respectively) and medium accuracy (Cb of 0.827 and 0.859, respectively). The LRNS clearly over-predicted the intake of one study. When this study was removed from the comparison, the precision and accuracy considerably increased for the level 1 solution. Metabolisable protein was limiting ADG for more than 68% of the treatment averages. Both levels differed regarding precision and accuracy. While level 1 solution had the least MB compared with level 2 (0.058 and 0.159 kg/d, respectively), the precision was greater for level 2 than level 1 (0.89 and 0.70, respectively). The accuracy (Cb) was similar between level 1 and level 2 (p = 0.8997; 0.977 and 0.871, respectively). The RMSEP indicated that both levels were on average under-or over-predicted by about 190 g/d, suggesting that even though the accuracy (Cb) was greater for level 1 compared to level 2, both levels are likely to wrongly predict ADG by the same amount. Our analyses indicated that the level 1 solution can predict DMI reasonably well for this type of animal, but it was not entirely clear if animals consumed at their voluntary intake and/or if the roughness of the diet decreased DMI. A deficit of ruminally-undegradable protein and/or a lack of microbial protein may have limited the performance of these animals. Based on these evaluations, the LRNS level 1 solution may be an alternative to predict animal performance when, under specific circumstances, the fractional degradation rates of the carbohydrate and protein fractions are not known.