Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Growth of Organic/Inorganic MAPbI3 Perovskite Thin Films via Chemical Vapor Deposition

화학 기상 증착법을 이용한 유/무기 MAPbI3 페로브스카이트 박막 성장

  • Jung, Jang-Su (Department of Materials Science and Engineering, Chungnam National University) ;
  • Eom, Jiho (Department of Materials Science and Engineering, Chungnam National University) ;
  • Pammi, S.V.N. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • 정장수 (충남대학교 신소재공학과) ;
  • 엄지호 (충남대학교 신소재공학과) ;
  • ;
  • 윤순길 (충남대학교 신소재공학과)
  • Received : 2020.04.08
  • Accepted : 2020.04.13
  • Published : 2020.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

Methylammonium lead iodide (MAPbI3) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI2) and lead bis (dipivaloylmethanate) [Pb(dpm)2] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI2 precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI3 thin films degraded into the PbI2 phase. In contrast, for the Pb(dpm)2 precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)2 is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI3 thin films were successfully grown on glass substrates using Pb(dpm)2. The rms (root-mean-square) roughness of MAPbI3 thin films formed from Pb(dpm)2 was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI2. The grain size of the films formed from Pb(dpm)2 was as large as approximately 350 nm.

Keywords

References

  1. M. A. Green, A. Ho-Baillie, and H. J. Snaith, Nat. Photonics, 8, 506 (2014). [DOI: https://doi.org/10.1038/nphoton.2014.134]
  2. S. D. Stranks, G. E. Eperon, G. Grancini, C. Menelaou, M.J.P. Alcocer, T. Leijtens, L. M. Herz, A. Petrozza, and H. J. Snaith, Science, 342, 341 (2013). [DOI: https://doi.org/10.1126/science.1243982]
  3. C. Wehrenfennig, G. E. Eperon, M. B. Johnston, H. J. Snaith, and L. M. Herz, Adv. Mater., 26, 1584 (2014). [DOI: https://doi.org/10.1002/adma.201305172]
  4. N. G. Park, J. Phys. Chem. Lett., 4, 2423 (2013). [DOI: https://doi.org/10.1021/jz400892a]
  5. B. R. Sutherland and E. H. Sargent, Nat. Photonics, 10, 295 (2016). [DOI: https://doi.org/10.1038/nphoton.2016.62]
  6. L. Dou, Y. Yang, J. You, Z. Hong, W. H. Chang, G. Li, and Y. Yang, Nat. Commun., 5, 5404 (2014). [DOI: https://doi.org/10.1038/ncomms6404]
  7. A. Kojima, K. Teshima, Y. Shirai, and T. Miyasaka, J. Am. Chem. Soc., 131, 6050 (2009). [DOI: https://doi.org/10.1021/ja809598r]
  8. Best Research-Cell Efficiencies, https://www.nrel.gov/pv/assets/pdfs/best-research-cell-efficiencies.20190802.pdf (2019).
  9. N. J. Jeon, J. H. Noh, Y. C. Kim, W. S. Yang, S. Ryu, and S. I. Seok, Nat. Mater., 13, 897 (2014). [DOI: https://doi.org/10.1038/nmat4014]
  10. J. H. Heo, M. H. Lee, M. H. Jang, and S. H. Im, J. Mater. Chem. A, 4, 17636 (2016). [DOI: https://doi.org/10.1039/C6TA06718B]
  11. B. Wang and T. Chen, Adv. Sci., 3, 1500262 (2016). [DOI: https://doi.org/10.1002/advs.201500262]
  12. M. Liu, M. B. Johnston, and H. J. Snaith, Nature, 501, 395 (2013). [DOI: https://doi.org/10.1038/nature12509]
  13. M. M. Tavakoli, L. Gu, Y. Gao, C. Reckmeier, J. He, A. L. Rogach, Y. Yao, and Z. Fan, Sci. Rep., 5, 14083 (2015). [DOI: https://doi.org/10.1038/srep14083]
  14. S.V.N. Pammi, H. W. Lee, J. H. Eom, and S. G. Yoon, ACS Appl. Energy Mater., 1, 3301 (2018). [DOI: https://doi.org/10.1021/acsaem.8b00505]
  15. B. Conings, J. Drijkoningen, N. Gauquelin, A. Babayigit, J. D'Haen, L. D'Olieslaeger, A. Ethirajan, J. Verbeeck, J. Manca, E. Mosconi, F. D. Angelis, and H. G. Boyen, Adv. Energy Mater., 5, 1500477 (2015). [DOI: https://doi.org/10.1002/aenm.201500477]
  16. Y. Han, S. Meyer, Y. Dkhissi, K. Weber, J. M. Pringle, U. Bach, L. Spiccia, and Y. B. Cheng, J. Mater. Chem. A, 3, 8139 (2015). [DOI: https://doi.org/10.1039/C5TA00358J]
  17. A. Dualeh, N. Tetreault, T. Moehl, P. Gao, M. K. Nazeeruddin, and M. Gratzel, Adv. Funct. Mater., 24, 3250 (2014). [DOI: https://doi.org/10.1002/adfm.201304022]
  18. T. Supasai, N. Rujisamphan, K. Ullrich, A. Chemseddine, and T. Dittrich, Appl. Phys. Lett., 103, 183906 (2013). [DOI: https://doi.org/10.1063/1.4826116]
  19. Y. M. Kim, W. J. Lee, and H. G. Kim, Thin Solid Films, 279, 140 (1996). [DOI: https://doi.org/10.1016/0040-6090(95)08171-2]
  20. J. H. Choi and H. G. Kim, J. Appl. Phys., 74, 6413 (1993). [https://doi.org/10.1063/1.355143]
  21. B. R. Sutherland, S. Hoogland, M. M. Adachi, P. Kanjanaboos, C.T.O. Wong, J. J. McDowell, J. Xu, O. Voznyy, Z. Ning, A. J. Houtepen, and E. H. Sargent, Adv. Mater., 27, 53 (2015). [DOI: https://doi.org/10.1002/adma.201403965]
  22. KOJUNDO CHEMICAL LABORATORY CO.,LTD, Pb(dpm)2, https://www.kojundo.co.jp/dcms_media/other/Pb_dpm_2_EN.pdf (2003).
  23. V. V. Krisyuk, A. E. Turgambaeva, and I. K. Igumenov, Chem. Vap. Deposition, 4, 43 (1998). [DOI: https://doi.org/10.1002/(SICI) 1521-3862(199803)04:02<43::AID-CVDE43>3.0.CO;2-J]