• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.593-596
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• 2002

A design of clock and data recovery (CDR) circuit for the SONET OC-48 using a standard 0.18 ${\mu}m$ CMOS process has been performed. The phase detector and the charge pump must be able to operate at the 2.5 Gb/s input data speed and also accurately compare phase errors to reduce clock jitter. As a phase detector, the Hogge phase detector is selected but two transistors are added to improve the performance of the D-F/F. The charge pump was also designed to be placed indirectly input and output. A general ring oscillator topology is presented and simulated. It provides five-phase outputs and 220 MHz to 3.12 GHz tuning range.

• ETRI Journal
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• v.19 no.4
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• pp.402-413
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• 1997

A CMOS device which has an extended heavily-doped amorphous silicon source/drain layer on the field oxide and an amorphous silicon local interconnection (ASLI) layer in the self-aligned source/drain region has been studied. The ASLI layer has some important roles of the local interconnections from the extended source/drain to the bulk source/drain and the path of the dopant diffusion sources to the bulk. The junction depth and the area of the source/drain can be controlled easily by the ASLI layer thickness. The device in this paper not only has very small area of source/drain junctions, but has very shallow junction depths than those of the conventional CMOS device. An operating speed, however, is enhanced significantly compared with the conventional ones, because the junction capacitance of the source/drain is reduced remarkably due to the very small area of source/drain junctions. For a 71-stage unloaded CMOS ring oscillator, 128 ps/gate has been obtained at power supply voltage of 3.3V. Utilizing this proposed structure, a buried channel PMOS device for the deep submicron regime, known to be difficult to implement, can be fabricated easily.

• 전자공학회논문지 IE
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• v.48 no.3
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• pp.1-9
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• 2011

In this paper, we develop an analytical expression for the propagation delay of submicrometer CMOS inverter using the triangle-shaped waveform of output current and two fitting parameters. Our model shows that simulation results are well in accordance with HSPICE results. Maximum simulation errors of total inverter delay and jitter are below 0.6% and 2.8%, respectively. Comparing with previous researches, the new model has better fittering characteristics in the range of low operating voltage. We also have fabricated the inverters with ten chains and estimated inverter delay and jitter characteristics. The results show that the values of delay and jitter in the fabricated samples come close to the values of those in the new model.

• 전자공학회논문지 IE
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• v.45 no.4
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• pp.1-6
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• 2008

A fast-hopping frequency synthesizer that reduces complexity and power consumption is presented for MB-OFDM UWB applications. The proposed architecture uses 3960 MHz LC VCO, 528 MHz ring oscillator, passive mixer and LC-tuned Q-enhancement BPF to generate Band Group 1 frequencies. The adjacent channel rejection ratio is less than -40 dBc for 3432 MHz and -H dBc for 4488 MHz. A fast switching SCL-tpre MUX is used to produce the required channel output signal and it takes less than 2.2 ns for band switching. The total power consumption is 47.9 mW from a 1.8 V supply.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.931-936
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• 2018

We designed an x-band radar for motion detector using a frequency tunable hairpin ring resonator. The proposed doppler radar sensor can vary the oscillation frequency by applying a hairpin resonator using a varactor diode to the oscillator, and this can also reduce the size by transmitting and receiving a signal from Tx/Rx dual antenna. The fabricated doppler radar sensor was fabricated in $30{\times}24mm$, and it was confirmed that the pulse width difference occurred according to the distance from the object. The measurement results showed oscillation at 10.525GHz. We confirmed that it is enough to use as radar for motion detection from the measured results.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.451-454
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• 2011

In this paper, a wideband clock generator using novel Automatic frequency calibration(AFC) scheme is proposed. Wideband clock generator using AFC has the advantage of small VCO gain and wide frequency band. The conventional AFC compares whether the feedback frequency is faster or slower then the reference frequency. However, the proposed AFC can detect frequency difference between reference frequency with feedback frequency. So it can be reduced an operation time than conventional methods AFC. Conventional AFC goes to the initial code if the frequency step changed. This AFC, on the other hand, can a prior state code so it can approach a fast operation. In simulation results, the proposed clock generator is designed for DisplayPort using the CMOS ring-VCO. The VCO tuning range is 350MHz, and a VCO frequency is 270MHz. The lock time of clock generator is less then 3us at input reference frequency, 67.5MHz. The phase noise is -109dBC/Hz at 1MHz offset from the center frequency. and power consumption is 10.1mW at 1.8V supply and layout area is $0.384mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.12
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• pp.1325-1332
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• 2009

In this paper, we design a 2.4 GHz bio-radar system that can detect human heartbeat and respiration signals with small size and improved noise performance using single circular-polarized antenna and phase-locked loop. The demonstrated bio-radar system consists of single circular-polarized antenna with $90^{\circ}$ hybrid, low-noise amplifier, power amplifier, voltage-controlled oscillator with phase-locked loop circuits, quadrature demodulator and analog circuits. To realize compact size, the printed annular ring stacked microstrip antenna is integrated on the transceiver circuits, so its dimension is just $40\times40mm^2$. Also, to improve signal-to-noise-ratio performance by phase noise due to transmitter leakage signal, the phase-locked loop circuit is used. The measured results show that the heart rate and respiration accuracy was found to be very high for the distance of 50 cm without the additional digital signal processing.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.35-42
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• 2013

In this paper, the analog performance of FinFET structure was estimated by extracting the DC/AC characteristics of the 22 nm process FinFET structures with different layout considering spacer and SEG using 3D device simulator, Sentaurus. Based on the analysis results, layout methods to enhance the analog performance of multi-fin FinFET structures are proposed. By adding the spacer and SEG structures, the drive current of 1-fin FinFET increases. However, the unity gain frequency, $f_T$, reduces by 19.4 % due to the increase in the total capacitance caused by the added spacer. If the process element is not included in multi-fin FinFET, replacing 1-finger with 2-finger structure brings approximately 10 % of analog performance improvement. Considering the process factors, we propose methods to maximize the analog performance by optimizing the interconnect and gate structures.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.907-913
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• 2015

This work presents a method to predict the near magnetic field distribution on the digital switching circuit mounted on PCB using co-simulation of circuit and electromagnetic fields. The proposed method first obtains the normalized near field distribution by exciting the signal and power ports of the switching circuit using sinusoidal sources. Then the real near magnetic field distribution is determined by weighting the normalized field distribution using the current spectrum of the switching circuit. To confirm the proposed method, a switching IC with a ring oscillator and a output buffer is fabricated and measured in the form of chip-on-board. The surface magnetic field distribution is measured using a magnetic probe above the PCB and compared with the simulation results. Experimental results show the correspondence between simulation and measurement results within 10 dB up to fifth harmonics.