• 제목/요약/키워드: Resistance-capacitance

검색결과 459건 처리시간 0.023초

스위칭 소자의 전력 스트레스를 제거하기 위한 BUCK DC-DC 컨버터 (BUCK DC-DC Converter to Reduce Power Stress of Switching Device)

  • 이성백;박진홍
    • 한국조명전기설비학회지:조명전기설비
    • /
    • 제10권6호
    • /
    • pp.54-61
    • /
    • 1996
  • 본 논문에서는 기존에 제시된 영전압 준공진 buck dc-dc 컨버터를 시뮬레이션을 이용하여 분석하고, 이에서 발생하는 문제점을 분석하였다. 그리고 부하저항을 낮게 가변함에 따라 소자의 스트레스가 증가함을 확인하였다. 그 원인이 freewheeling다이오드의 기생 커채시턴스에 의한 전압상승에 의하여 발생함을 확인하고, 이를 개선할수 있는 영전압 스위칭 컨버터를 제시한다.

  • PDF

(Sr.Ca)TiO$_3$계 BL Capacitor재료의 유전특성에 관한 연구 (A Study on the Dielectric Properties of (Sr,Ca)TiO$_3$-based BL Capacitor Materials)

  • 정규희;김진사;최운식;김충혁;이준웅
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
    • /
    • pp.25-28
    • /
    • 1993
  • In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

  • PDF

에미터 구조변화에 따른 AlGaAs/GaAs HBT의 고주파 특성 (Emitter structure dependence of the high frequency performance of AlGaAs/GaAs HBTs)

    • 한국진공학회지
    • /
    • 제9권2호
    • /
    • pp.167-171
    • /
    • 2000
  • AlGaAs/GaAs HBT의 동작특성에 미치는 에미터 구조의 영향을 조사하였다. 에미터의 크기 변화에 의해 차단주파수와 최대공진주파수가 변화하였으며, 이는 에미터 구조에 따라 저항과 접합용량이 변하기 때문이다. 또한 에미터의 주변길이와 접합면적도 HBT의 고주파 특성에 영향을 미치는 것을 알 수 있다.

  • PDF

765kV 비연가 송전계통 과도 특성에 관한 고찰 (A Study on the Transient Characteristics in 765kV Untransposed Transmission Systems)

  • 안용진;강상희
    • 대한전기학회논문지:전력기술부문A
    • /
    • 제53권7호
    • /
    • pp.397-404
    • /
    • 2004
  • This paper describes a study of transient characteristics in 765kV untransposed transmission lines. As the 765(kV) system can carry bulk power, some severe fault on the system nay cause large system disturbance. The large shunt capacitance and small resistance of 765kv transmission line make various difficulties for its protection. These problems including current difference between sending and receiving terminals on normal power flow, low order harmonic current component in fault current and current transformer saturation due to the long DC time constant of the circuit etc. must be investigated and solved. The analysis of transient characteristics at sending terminal has been carried out for the single phase to ground fault and 3-phase short fault, etc. The load current, charging current in normal condition and line flows, fault current, THD(Total Harmonic Distortion) of harmonics, time constants have been analysed for the 765kV untransposed transmission line systems.

154kV GIS 변전소 P.T. 철공진 규명 및 방지대책 (Investigation and Countermeasure of P.T Ferroresonance in the 154kV GIS Substation)

  • 최원수;김승규;지성구;김순태
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2002년도 하계학술대회 논문집 A
    • /
    • pp.541-543
    • /
    • 2002
  • This paper describes the analysis resulates on the P.T ferroresonance at 154kV GIS(Gas Insulated Substation) by EMTP(Electromagnetic transient program). We had simulated the PT ferroresonance between a potential transformer(PT) and open circuit braker's grading capacitance. The ferroresonance leads to very large power frequency overvoltage on PT bus and subsequent insulation failure. The damping circuit connected on the secondary winding were considered in the model. The actual countermeasure include a saturable inductor and a resistor series mounted, but the 2 ohms of damping resistance was used in the computational model.

  • PDF

ITO/$Alq_3$/Al의 유기 발광 소자에서 $Alq_3$의 두께 변화에 따른 임피던스 특성 (Impedance properties with thickness variation of $Alq_3$ in organic light-emitting diodes of ITO/$Alq_3$/Al)

  • 정동희;김상걸;정택균;허성우;이호식;송민종;김태완
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
    • /
    • pp.1098-1101
    • /
    • 2003
  • Complex impedances with frequency and voltage variation were analyzed in ITO/$Alq_3$/Al device structure at thickness 100 nm and 200 nm of $Alq_3$, respectively. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.

  • PDF

Influence of ionic liquid additives on the conducting and interfacial properties of organic solvent-based electrolytes against an activated carbon electrode

  • Kim, Kyungmin;Jung, Yongju;Kim, Seok
    • Carbon letters
    • /
    • 제15권3호
    • /
    • pp.187-191
    • /
    • 2014
  • This study reports on the influence of N-butyl-N-methylpyrrolidinium tetrafluoroborate ($PYR_{14}BF_4$) ionic liquid additive on the conducting and interfacial properties of organic solvent based electrolytes against a carbon electrode. We used the mixture of ethylene carbonate/dimethoxyethane (1:1) as an organic solvent electrolyte and tetraethylammonium tetrafluoroborate ($TEABF_4$) as a common salt. Using the $PYR_{14}BF$ ionic liquid as additive produced higher ionic conductivity in the electrolyte and lower interface resistance between carbon and electrolyte, resulting in improved capacitance. The chemical and electrochemical stability of the electrolyte was measured by ionic conductivity meter and linear sweep voltammetry. The electrochemical analysis between electrolyte and carbon electrode was examined by cyclic voltammetry and electrochemical impedance spectroscopy.

원환형 적층 압전 액츄에이터의 전기적 특성 (Electrical Properties of Ring-type Multilayer Piezoelectric Actuator)

  • 김국진;류주현
    • 한국전기전자재료학회논문지
    • /
    • 제20권10호
    • /
    • pp.869-872
    • /
    • 2007
  • In this study, in order to develop low temperature sintering ultrasonic nozzle, single-layer and multilayer ring-type piezoelectric actuators were manufactured using PMN-PNN-PZT ceramics, And then the electrical properties were investigated. A ring-type piezoelectric actuator was modeled by ATILA program using finite element method(FEM). The piezoelectric actuator dimension was $\Phi26.5$ (outer diameter), $\Phi12$ (inner diameter), 3.5 mm (thickness). By FEM analysis, resonant and anti-resonant frequencies were appeared as 56.7 kHz and 61.5 kHz. The displacement increased with the increases of the number of layer. Based on the result, ring-type multilayer piezoelectric actuators were manufactured at low co-firing temperature of $940^{\circ}C$. The resonant resistance decreased with the increases of the number of layer. And also, the capacitance increased with the increases of the number of layer. The mechanical quality factor (Qm) decreased with the increases of the number of layer.

온도특성을 고려한 착자회로 및 요크의 특성 해석 (Characteristics Analysis of Magnetizing Circuit and Fixture considering Temperature Characteristic)

  • 백수현;맹인재;김필수;김철진
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
    • /
    • pp.82-84
    • /
    • 1993
  • A method for simulating general characteristics and temperature characteristics of magnetizing fixture coil of the capacitor discharge impulse magnetizer-magnetizing fixture system using SPICE is presented. This method has been developed which can aid the design, understanding and inexpensive, time-saving of magnetizing circuit. As the detailed characteristics of magnetizing circuit can be obtained, the efficient design of the magnetizing circuit which produce desired magnet will be possible using our SPICE modeling. Especially, The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits tinder different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The temperature estimation method uses multi-lumped model with equivalent thermal resistance and thermal capacitance.

  • PDF

광통신용 HBT LD 구동 회로의 대역폭 개선을 위한 버퍼 구조에 관한 연구 (A Study on Buffer Structures to Improve the Bandwidth of HBT LD Driver for Optical Communication)

  • Hyeon Cheol Ki
    • 전자공학회논문지B
    • /
    • 제32B권5호
    • /
    • pp.710-719
    • /
    • 1995
  • In LD driver with HBT's. the speed characteristics of HBT's are deteriorated very much mainly due to the source resistance(Rs) of the signal applied to the LD driving HBT. We improved the bandwidth of LD driver by 2-5GHz with modifications of EF buffer. Because the modified buffers are composed of EF structure, their bandwidths are decreased rapidly as Rs is increased. When Rs is large these buffers decrease the bandwidth of the LD driver rather than increase it. To solve this problem, we propose a new buffer structure which contaings new charging and discharging path for the parasitic collector capacitance of the HBT. For Rs>100${\Omega}$, it shows superior characteristics of improving bandwidth to the EF buffers. It also shows good gain characteristics.

  • PDF