Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Impedance properties with thickness variation of $Alq_3$ in organic light-emitting diodes of ITO/$Alq_3$/Al

ITO/$Alq_3$/Al의 유기 발광 소자에서 $Alq_3$의 두께 변화에 따른 임피던스 특성

  • Published : 2003.07.10
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Abstract

Complex impedances with frequency and voltage variation were analyzed in ITO/$Alq_3$/Al device structure at thickness 100 nm and 200 nm of $Alq_3$, respectively. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.

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