• Title/Summary/Keyword: Reference cell

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A New Reference Cell for 1T-1MTJ MRAM

  • Lee, S.Y.;Kim, H.J.;Lee, S.J.;Shin, H.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.110-116
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    • 2004
  • We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

HSPICE Macro-Model and Midpoint-Reference Generation Circuits for MRAM (MRAM용 HSPICE 마크로 모델과 midpoint reference 발생 회로에 관한 연구)

  • 이승연;이승준;신형순
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.8
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    • pp.105-113
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    • 2004
  • MRAM uses magneto-resistance material as a storage element, which stores cell data as a polarization of spin in a free magnetic layer. This magneto-resistance material has hysteresis, asteroid curve at the thermal variation, and R-V characteristics for switching the data. Therefore, a macro-model which can reproduce these characteristics is required for MRAM simulation. We propose a macro-model of TMR (Tunneling Magneto Resistance) that can reproduce all of these characteristics on HSPICE. Also we propose a novel sensing scheme, which generates reference resistance having the medium value, ( $R_{H}$+ $R_{L}$)/2, for a wide range of applied voltage and present simulation results based on the HSPICE macro-model of MTJ that we have developed.d.d.

Optimal Selection of Reference Vector in Sub-space Interference Alignment for Cell Capacity Maximization (부분공간 간섭 정렬에서 셀 용량 최대화를 위한 최적 레퍼런스 벡터 설정 기법)

  • Han, Dong-Keol;Hui, Bing;Chang, Kyung-Hi;Koo, Bon-Tae
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.5A
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    • pp.485-494
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    • 2011
  • In this paper, novel sub-space interference alignment algorithms are proposed to boost the capacity in multi-cell environment. In the case of conventional sub-space alignment, arbitrary reference vectors have been adopted as transmitting vectors at the transmitter side, and the inter-cell interference among users are eliminated by using orthogonal vectors of the chosen reference vectors at the receiver side. However, in this case, sum-rate varies using different reference vectors even though the channel values keep constant, and vice versa. Therefore, the relationship between reference vectors and channel values are analyzed in this paper, and novel interference alignment algorithms are proposed to increase multi-cell capacity. Reference vectors with similar magnitude are adopted in the proposed algorithm. Simulation results show that the proposed algorithms provide about 50 % higher sum-rate than conventional algorithm.

Orthogonal Reference Vectors Selection Method of Subspace Interference Alignment (부분공간 간섭 정렬에서 합용량 향상을 위한 직교 레퍼런스 벡터 선정 방법)

  • Seo, Jong-Pil;Kim, Hyun-Soo;Ahn, Jae-Jin;Chung, Jae-Hak
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.5A
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    • pp.457-463
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    • 2011
  • This paper proposes theorthogonal reference vectors selection method of the subspace interference alignment. The proposed method selects multiple orthogonal reference vectors instead of using one reference vector for all users at the same time. The proposed scheme selects a reference vector which maximizes a sum-rate for a certain cell, generates orthogonal vectors to the previous selected vector and selects the one of orthogonal vectors whose sum rate is maximized for each cell. Larger channel gain and sum-rate than the previous method can be obtained by selection degree of freedom. The computer simulation demonstrates the proposed method gives higher sum-rate compared with that of the previous reference vector selection method.

Widely Tunable Adaptive Resolution-controlled Read-sensing Reference Current Generation for Reliable PRAM Data Read at Scaled Technologies

  • Park, Mu-hui;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.363-369
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    • 2017
  • Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

OS CFAR Computation Time Reduction Technique to Apply Radar System in Real Time (레이다 시스템 실시간 적용을 위한 OS CFAR 연산 시간 단축 방안)

  • Kong, Young-Joo;Woo, Seon-Keol;Park, Sungho;Shin, Seung-Yong;Jang, Youn Hui;Yang, Eunjung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.10
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    • pp.791-798
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    • 2018
  • The CFAR algorithm is mainly used for target detection in radar systems. In particular, OS CFAR is used in a non-uniform noise environment. However, it requires a large amount of computation, because it should sort reference cells in ascending order. This makes it difficult to apply the radar system in real time. In this paper, we describe how to reduce the computational burden of OS CFAR. We compared the power of the test cell and reference cell to determine only the presence or absence of target detection. The common reference cells overlapping in the reference cells of the three test cells are obtained. We first compare the test cell with the highest power value among the three test cells to the common reference cells. Next, we compare each test cell to general reference cells, excluding the common reference cells. The computation time is shortened by reducing the power comparison computation amounts.

Reference Feature Based Cell Decomposition and Form Feature Recognition (기준 특징형상에 기반한 셀 분해 및 특징형상 인식에 관한 연구)

  • Kim, Jae-Hyun;Park, Jung-Whan
    • Korean Journal of Computational Design and Engineering
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    • v.12 no.4
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    • pp.245-254
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    • 2007
  • This research proposed feature extraction algorithms as an input of STEP Ap214 data, and feature parameterization process to simplify further design change and maintenance. The procedure starts with suppression of blend faces of an input solid model to generate its simplified model, where both constant and variable-radius blends are considered. Most existing cell decomposition algorithms utilize concave edges, and they usually require complex procedures and computing time in recomposing the cells. The proposed algorithm using reference features, however, was found to be more efficient through testing with a few sample cases. In addition, the algorithm is able to recognize depression features, which is another strong point compared to the existing cell decomposition approaches. The proposed algorithm was implemented on a commercial CAD system and tested with selected industrial product models, along with parameterization of recognized features for further design change.

Dynamic Reference Scheme with Improved Read Voltage Margin for Compensating Cell-position and Background-pattern Dependencies in Pure Memristor Array

  • Shin, SangHak;Byeon, Sang-Don;Song, Jeasang;Truong, Son Ngoc;Mo, Hyun-Sun;Kim, Deajeong;Min, Kyeong-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.685-694
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    • 2015
  • In this paper, a new dynamic reference scheme is proposed to improve the read voltage margin better than the previous static reference scheme. The proposed dynamic reference scheme can be helpful in compensating not only the background pattern dependence but also the cell position dependence. The proposed dynamic reference is verified by simulating the CMOS-memristor hybrid circuit using the practical CMOS SPICE and memristor Verilog-A models. In the simulation, the percentage read voltage margin is compared between the previous static reference scheme and the new dynamic reference scheme. Assuming that the critical percentage of read voltage margin is 5%, the memristor array size with the dynamic scheme can be larger by 60%, compared to the array size with the static one. In addition, for the array size of $64{\times}64$, the interconnect resistance in the array with the dynamic scheme can be increased by 30% than the static reference one. For the array size of $128{\times}128$, the interconnect resistance with the proposed scheme can be improved by 38% than the previous static one, allowing more margin on the variation of interconnect resistance.

Reference Vector Diversity of Subspace Interference Alignment in Multi-cell Multi-user Uplink Systems (부분공간 간섭 정렬을 이용한 다중 셀 상향링크 시스템에서 합용량 향상을 위한 레퍼런스 벡터 다이버서티)

  • Seo, Jong-Pil;Lee, Yoon-Ju;Kwon, Dong-Seung;Lee, Myung-Hoon;Chung, Jae-Hak
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.7
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    • pp.23-28
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    • 2010
  • We propose a reference vector diversity method in multi-cell multi-user uplink system with the subspace interference alignment to obtain higher sum rate capacity. The proposed method transmits several reference vectors before the data transmission, and selects the best reference vector to maximize the cell sum rate. The proposed method provides higher sum-rate capacity compared with the previous interferenc alignment. Simulation result exhibits the proposed method improves the sum-rate capacity by 60%.