JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

A New Reference Cell for 1T-1MTJ MRAM

  • Published : 2004.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

Keywords

References

  1. Tzu-Ning Fang and Jian-Gang Zhu, '2D Write Addressability of tunneling Junction MRAM elements,' IEEE transactions on magnetics, Vol. 37, NO. 4, JULY 2001 https://doi.org/10.1109/20.951022
  2. Geral B. Granley, Allan T. Hurst, ' Projected Applications, Status and Plans For Honeywell. High Density, High Performance, Nonvolatile Memory (combined papers)' 1996 lnt'l Nonvolatile Memory Technology Conference https://doi.org/10.1109/NVMT.1996.534686
  3. K. Lee, Y. Park, H. Min, C. Lee, and H. Shin, J. of Korean Phys. Soc., 44, 73 (2004)
  4. H. Lee and H. Shin, J. of Korean Phys. Soc., 44, 56 (2004)
  5. J. Lee and H. Shin, J. of Korean Phys. Soc., 44, 50 (2004)
  6. D. Wang, M. Tondra, C. Nordman and J. M. Daughton, IEEE Trans. magnetics, 35, 2886 (1999) https://doi.org/10.1109/20.801014
  7. S. Lee et al., submitted to 2004 Symp. on VLSI Circuits
  8. M. Durlam et al., Tech. Dig. of Symp. on VLSI Circuits (Hawai, June, 2002), p.158 https://doi.org/10.1109/VLSIC.2002.1015073
  9. H. S. Jeong et al., Tech. Dig. of IEDM (San Francisco, Dec., 2002), p.551 https://doi.org/10.1109/IEDM.2002.1175901