• Korean Journal of Poultry Science
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• v.26 no.1
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• pp.1-25
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• 1999

Concerns about meat quality, including chicken meat, for the human diet has led to many attempts to manipulate the carcass fat and increase the eating quality. For actual eating quality, the birds must be grown and finished in a manner that results in meat that are tender, succulent and of good flavor, as well as being free from any foreign taint, flavor or safety hazard. Tenderization treatment with high voltage(820V) electrical stimulation and prechill muscle tensioning would improve the tenderness of chicken meat. Proper programs for the withdrawal of feed and water require a team approach for maximizing yield of meat and minimizing carcass contamination. Also effding of supplemental levels of-tocopherol to poultry with vegetable or fish oils increases of desirable polyunsaturated fatty acid(PUFA) content and stablizes the meat against rancidity and fish off-flavors. The nutritional effects of varying dietary ingredients on broiler carcass fat content are also important. Increasing the levels of energy in the ration increases the carcass fat content, while increasing the proteing levels decreases carcass fat content. Supplement-tation of poultry diets with amino acids such as methionine, lysine, glycine and tryptophan as well as amino acid such as well as amino acid mixtures can reduce body fat deposition. Normal stress leads to chicken muscular damage resulting in reduced meat quality, but this can be controlled by preslaughter management practices. Feed manufactures can utilize ntilize nutrient modulation to control pale soft exudative(PSE)syndrome. Finally, the success in poultry meat production depends on the consistent achievement of carefully selected levels of quality. Quality assurance should be the wider function of incorporating quality into the production system and the combination of motivating quality into actions and operations.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.5
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• pp.352-358
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• 2018

A split-capacitor (SC) dual-active-bridge (DAB) converter is proposed in this study. The DC-link capacitors of input and output are split in the proposed converter. The primary and secondary windings of transformer are connected to the midpoints of the DC-links. Hence, the SC DAB converter can inherently prevent transformer from saturation. Although the switch current stress of the proposed converter is twice that of the conventional DAB converter, the switch voltage stress is reduced by half. Therefore, the proposed converter can reduce switching loss and achieve high efficiency in a high switching frequency. Given the SC structure, the proposed converter can readily be connected to neutral-point-clamped- or half-bridge-type converters. The topology of the proposed converter is presented and the operating principle is analyzed in detail. A 3-kW hardware prototype was built and tested to verify the performance of the proposed converter.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.389-395
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• 2019

This paper presents the sensorless position control of an auxiliary scaffolding step system for vehicles using DC motors. The designed auxiliary scaffolding step has a mechanical protector at the stop position. At this position, the scaffolding is forcibly stopped by the mechanical protector, and the motor current is dramatically increased to the stall current of the DC motor, thereby increasing the electrical damage. In this study, the estimated back EMF- and current model-based observers are proposed to estimate the motor speed and stop position. A simple V/F acceleration voltage pattern is used to operate the auxiliary scaffolding system. The estimated moving position is adopted to determine the stop position of the DC motor with the load current state. The operating current of the DC motor can be reduced by the estimated moving position and V/F acceleration pattern. At the stop position, the proposed sensorless position controller can smoothly stop the DC motor with the estimated moving position and reduced load current without any mechanical and electrical stress from the stall current from the mechanical protector. The proposed control scheme is verified by the comparison of simulations and experiments.

• Journal of the Korean Society of Safety
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• v.26 no.1
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• pp.8-14
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• 2011

Noise and vibration are likely to disturb the sensory system of human body leading to psychological stress and thereby property damage. In this research, a cut out switch(COS) with a built-in acoustic absorber along with a COS fuse broken was developed to reduce percussion noise. This new system is based on a design approach that combines existing absorber systems: expansion type, resonator type, and acoustic absorber type silencer The noise performance of the new system was simulated using the $SYSNOISE^{TM}$ software under optimized parameters: the diameter of perforated plate 2 mm, the plate thickness 3 mm, the width of expansion room 25 mm, the impinging vortex room 14 mm, and the noise absorbtion room 10 mm. The results showed that it reduced noise by approximately 41.1 dB compared to the current systems available in the market. Furthermore, it showed reduced noise by approximately 12 dB more than a product with an acoustic absorber of the Fault Tamer(USA).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.105-110
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• 2008

We have proposed a new structure of poly-silicon thin film transistor(TFT) which was fabricated the LDD region using doping oxide with graded spacer by etching shape retio. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $HT_2$/plasma processes are fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring /analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si Brain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplity of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1677-1679
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• 1999

Crosslinked LB films of p-HP (p-hexadecoxyphenol) were produced to insulation layers of electronic devices. The fabrication and the electrical properties of LB films according to crosslinking have investigated respectively to Brewster angle microscopy (BAM), Scanning Maxwell-stress microscopy (SMM), current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. According to crosslinking, conductivity of p-HP LB films have improved and relative dielectric constant have reduced.

• Journal of Power Electronics
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• v.6 no.4
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• pp.298-306
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• 2006

A high efficiency and low cost sustain driver for a plasma display panel (PDP) utilizing a current pumping method is proposed. The main concept of the proposed circuit is using the current source to charge and discharge the panel. As a result, all power switches can achieve zero voltage switching (ZVS) and every auxiliary switch can also achieve zero current switching (ZCS). Since the inductor current can compensate for the discharge current, the current stress of all the power switches can be reduced considerably. Furthermore, it has features such as a simpler structure, less mass, lower cost, and lower electromagnetic interference than in previous circuits.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.916-917
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• 2008

In this paper, Switching damage of switches that is used to proposed power conversion system is reduced by soft switching way. dissipation by part resonance and my resonance stress for resonance of resonance circuit are decreased. Is acted by conversion system high effectiveness. Have following characteristic. Design snubber circuit that is used by switch protection in existent hard work rate Topology by resonant circuit for sogt switching, circuit structure was simple and control system is easy. Also, Can generate free output voltage by multi level Tuesday of output that use individuation Power Cell's Phase Shift PWM, and Low-end switching frequency the harmonic is few.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.5
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• pp.501-506
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• 2013

A hold-up time compensation circuit is proposed to get high efficiency of the front-end phase-shifted full bridge DC/DC converter. The proposed circuit can make the phase-shifted full bridge front-end DC/DC converter built with 0.5 duty ratio so that the conduction loss of the primary side and voltage stress across rectifier in the secondary side are reduced and the higher efficiency can be obtained. Furthermore, the requirement of an output filter significantly can diminish due to the perfect filtered waveform. A 12V/100A prototype has been made and experimental results are given to verify the theoretic analysis and detailed features.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.311-314
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• 2003

In this paper, proposed circuit proposes that Active-Clamp-Circuits basis of a current-fed inverter linked type high frequency resonant dc-dc converter of conventional. and the paper the most of characteristics of the reduced high voltage stress main switches with active clamp circuits and output current constant with the resonant part consists of L, C resonant tank circuit. Also, the capacitor (C$_1$, C$_2$) connected in switches are a common using by resonance capacitor and ZVS capacitor. and circuit analysis used state equation of each part modes. Also we conform a rightfulness theoretical analysis by comparing a parameters values and simulation values obtained from simulation using Power MOS-FET as switching devices.