• 한국재료학회지
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• 열처리공학회지
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• 제14권3호
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• Applied Microscopy
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• 제18권2호
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• pp.59-76
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• 1988

In order to know the distribution, relative frequencies, types and morphology, endocrine cells in the intestinal tract of the hedgehog(Erinaceus koreanus) were studied by light microscopy, immunohistochemistry and electron microscopy. The results obtained are summarized as follows: 1. Two kinds of endocrine cells were demonstrated with two specific staining methods. Argyrophil cells(reactive cells for Grimelius method) were found most frequently in the intestinal region, and were infrequent in the rectum, whereas argentaffin cells (reactive cells for Masson-Hamperl method) were found most frequently in the rectum and in the other legions were infrequent. These reacting cells were mainly found in the intestinal glands, whereas a small number in the mucosa. 2. Twelve kinds of endocrine cells, gastrin(Gas)-, somatostatin (Som)-, serotonin(5-HT)-, glucagon(Glu)-, bovine pancreatic polypeptide(Bpp)-, cholecystokinin(Cck)-, secretin(Sec)-, motilin(Mot)-, glicentin(Gli)-, gastric inhibitor polypeptide(GIp)-, substance P(Sp)-, and neurotensin(Neu)-immunoreactive cells, were identified by immunohistochemical method. Gas-, Som-, 5-HT-, Glu-, Cck-, Sec-, Mot-, Gli-, Sp-, and Neu-reactive cells were observed in the duodenum, and among these Gas- and 5-HT-reactive cells were moderately found while the others were infrequent. In the jejunoileum Gas-, Som-, 5-HT-, Glu-, Cck-, Mot-, Gli-, GIp-, SP-, and Neu-reactive cells were found, and among these 5-HT- and GIp-reactive cells were moderately found while the others were infrequent. In the colon Sec-reactive cell was not detected. 5-HT-reactive cells were found most frequently and the others were infrequent in this region. 5-HT-, Bpp-, GIi- and Neu-reactive cells were found in the rectum. Among these 5-HT-reactive cells were found most frequently. 3. Electron microscopically, five types of endocrine cells, EC, ECL, D, G, A-like cell, were identified in the intestinal region. EC and ECL cells in the duodenum, EC, D and G cells in the jejuno-ileum, EC and A-like cells in the colon and EC cell in the rectum were observed respectively.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.13-17
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• 2006

The one-dimensional ZnO nanostructures prepared through thermal evaporation under various cooling down procedures by changing the flow rates of the carrier gas and the reactive gas were investigated. The nanorod structures were changed into the nanonail types with a broad head through the reduction of the flow rate of the carrier gas. The decrease of the reactive gas reduced the length of the nail heads due to the limited mass transport of reactive gas. The intensity ratio of the ultraviolet emission/green emission of photoluminescence was proportional to the length of the broad head showing a larger surface area. The vertically aligned nanostructures were grown along the [0001] direction of ZnO regardless of the aligned directions. The crystal direction of the nanostructures was determined by that of the initial ZnO crystal.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.985-989
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• 2005

본 논문에서는 비정질 반도체 및 절연체의 etching을 RIE를 사용하여 etching 조건을 결정하는 요인(chamber pressure, gas flow rate, rf power, 온도 등)들을 변화시켜 실험하였고, gas는 비정질 실리콘 박막의 reactive ion etching에 주로 사용되는 $CF_4,\; CF_4+O_2,\;CCl_2F_2,\;CHF_3\;gas$ 등을 사용하였다. 여기서 실리콘 박막의 식각은 $CF_4,\;CCl_2F_2,\;gas$를 그리고 insulator 막인 SiNx 박막의 식각은 $CF_4+O_2,\;CHF_3\;gas$를 사용하였다. 특히 $CCl_2F_2$ gas는 insulator 막인 SiNx 박막과의 식각 selectivity가 6:1로서 우수하기 때문이다. 정확한 control에 의해 높은 수율 (Yield) 을 얻을 수 있어 cost를 절감할 수 있다.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1658-1665
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• 1989

Reactor design considerations over several critical parameters for a planar type reactive ion etcher are given. The etch uniformity is taken as a principal design constraint. The characteristics of economicaly available vacuum pumping system are taken as practical design constraints. A set of theoretical conditions on the chamber geometry and on the gas delivery and vacuum system, that satisfy the design constraints, are derived from basic properties of RF glow discharge and gas dynamics. The theoretical results are applied to decide design parameters of a practical single-wafer-per-chamber planar type reactive ion etching machine.

• 대한임상독성학회지
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• 제3권1호
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• pp.60-62
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• 2005

A previously healthy 57-year-old woman with dyspnea and wheezing presented to the emergency department a few minutes after exposure to unknown gas from mixing bleach (sodium hypochlorite) and cleaning agent (hydrochloric acid) at work place. Initial physical examination revealed severe wheezing on both whole lung fields, but the chest radiograph was normal. Arterial blood gas analysis showed only moderate hypoxemia. The patient was treated with oxygen, $\beta$adrenergic bronchodilators, antihistamines and corticosteroids, after then symptoms were improved. And the patient discharged against medical advice. We report a rare case of reactive airways dysfuntion syndrome from chlorine gas exposure.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• 한국진공학회지
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• 제21권4호
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• pp.199-204
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• 2012

$SF_6$ 가스는 반도체 및 디스플레이 제조공정 중 건식식각 공정에서 널리 사용되는 가스이다. 하지만 $SF_6$ 가스는 대표적인 온실가스로서 지구 온난화에 큰 영향을 끼치기 때문에 반도체 및 디스플레이 공정에서 $SF_6$ 가스를 대체할 수 있는 가스의 연구가 필요한 상황이다. 그 후보군으로 떠오르고 있는 가스 중의 하나가 바로 $C_3F_6$ 가스이다. 이 가스를 이용하여 $Si_3N_4$ 박막을 건식식각 방법인 Reactive Ion Etching 공정을 수행하여 식각 특성에 관하여 연구하였으며, 흡착제 Zeolite 5A를 이용하여 식각공정 중 배출되는 가스 성분을 감소시켰다. Plasma Enhanced Chemical Vapor Deposition 장비를 이용하여 500 nm 두께의$Si_3N_4$ 박막을 증착하였으며, 노광 공정을 통해 패터닝을 한 후 Reactive Ion Etching 공정을 수행하였다. 그리고 Scanning Electron Microscope 장비를 이용하여 $Si_3N_4$ 박막의 식각된 단면과 식각율을 확인하였다. 또한 공정 후 흡착제 Zeolite 5A를 통과하기 전과 후에 배출되는 가스를 포집하여 Gas Chromatograph-Mass Spectrophotometry 장비를 이용하여 가스 성분을 측정 및 비교하였다.