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http://dx.doi.org/10.5757/JKVS.2012.21.4.199

A Study on Etching of Si3N4 Thin Film and the Exhausted Gas Using C3F6 Gas for LCD Process  

Jeon, S.C. (School of Electrical Engineering and Computer Science, Kyungpook National University)
Kong, D.Y. (School of Electrical Engineering and Computer Science, Kyungpook National University)
Pyo, D.S. (School of Electrical Engineering and Computer Science, Kyungpook National University)
Choi, H.Y. (Wonik Materials Co. Ltd.)
Cho, C.S. (School of Electrical Engineering, Kyungpook National University)
Kim, B.H. (Electronic Engineering, Catholic University of Daegu)
Lee, J.H. (School of Electrical Engineering and Computer Science, Kyungpook National University)
Publication Information
Journal of the Korean Vacuum Society / v.21, no.4, 2012 , pp. 199-204 More about this Journal
Abstract
$SF_6$ gas is widely used for dry etching process of semiconductor and display fabrication process. But $SF_6$ gas is considered for typical greenhouse gas for global warming. So it is necessary to research relating to $SF_6$ alternatives reducing greenhouse effect in semiconductor and display. $C_3F_6$ gas is one of the promising candidates for it. We studied about etch characteristics by performing Reactive Ion Etching process of dry etching and reduced gas element exhausted on etching process using absorbent Zeolite 5A. $Si_3N_4$ thin film was deposited to 500 nm with Plasma Enhanced Chemical Vapor Deposition and we performed Reactive Ion Etching process after patterning through photolithography process. It was observed that the etch rate and the etched surface of $Si_3N_4$ thin film with Scanning Electron Microscope pictures. And we measured and compared the exhausted gas before and after the absorbent using Gas Chromatograph-Mass Spectrophotometry.
Keywords
$C_3F_6$ gas; Reactive ion etching; Gas chromatograph-mass spectrophotometry;
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Times Cited By KSCI : 2  (Citation Analysis)
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