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Silicon Etching Process of NF3 Plasma with Residual Gas Analyzer and Optical Emission Spectroscopy in Intermediate Pressure  

Kwon, Hee Tae (Kwangwoon University Dept. of Electrical and Biological Physics)
Kim, Woo Jae (Kwangwoon University Dept. of Electrical and Biological Physics)
Shin, Gi Won (Kwangwoon University Dept. of Electrical and Biological Physics)
Lee, Hwan Hee (Kwangwoon University Dept. of Electrical and Biological Physics)
Lee, Tae Hyun (Kwangwoon University Dept. of Electrical and Biological Physics)
Kwon, Gi-Chung (Kwangwoon University Dept. of Electrical and Biological Physics)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.4, 2018 , pp. 97-100 More about this Journal
Abstract
$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.
Keywords
$NF_3$ Plasma; Si Etching; Residual Gas Analyzer; Optical Emission Spectroscopy;
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