• 한국안전학회지
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• 제24권5호
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• pp.13-20
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• 2009

The risk assessment of thermal hazard to identify chemical or process hazard during early process developments have been considered. The early identification of thermal hazards associated with a process, such as rapid heats of reaction, exothermic decompositions, and the potential for thermal runaways before any large scale operations are undertaken. This paper presents to evaluate the safe operating parameters/envelope for exist plant operations. The assessment of thermal hazard with operating conditions such as amount of process materials, inhibitor, and catalyst on esterification process in manufacture of concrete mixture agents are described. The experiments were performed by a sort of calorimetry with the Multimax reactor system as a screening tool. The aim of the study was to evaluate the thermal risk of process material and mixture in terms of safety security to be practical applications in esterification process. It suggested that we should provide the thermal hazard of reaction materials to present safe operating conditions with cause of accident through this study.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.284-289
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• 2004

Since polymer materials at elevated temperatures are usually rate-sensitive, the analysis of RTP process requires considering the effect of the rate-dependent. The material behavior that exhibits rate-sensitivity is called visco-plastic. A two-dimensional visco-plastic finite element formulation which constitutive equation is based on the formulation proposed by Perzyna is presented. This Paper is purposed to calcuate pressure distribution on PMMA in compression process and to predict the relationship with defects after demolding process. This paper analyzes, both analytically and numerically, the pressure distributions on the surface of PMMA during open-die RTP process. In this research, PMMA is used to be simulated at $110^{\circ}C$ near the transition temperature.

• 한국재료학회지
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• 제18권10호
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.121.1-121.1
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• 2011

현재 상용화되고 있는 단결정 실리콘 태양전지는 알루미늄 페이스트를 이용하여 후면의 전 영역에 전계를 형성한다. 최근에는 고효율을 얻기 위하여 후면에 패시베이션 효과와 장파장에 대한 반사도를 증가 시키는 SiNx막을 증착 후, 국부적으로 전계를 형성하는 국부 후면 전극(Local back surface field)기술이 연구되고 있다. 본 연구에서는 전면만 텍스쳐 된 단결정 실리콘 웨이퍼를 이용하였다. Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용하여 전,후면에 SiNx를 증착 하였고 후면의 국부적인 전극 패턴 형성을 위하여 SiNx 식각용 페이스트를 사용한 스크린 프린팅 기술을 이용하였다. 스크린 프린팅을 이용하여 패턴이 형성된 후면에 알루미늄을 인쇄 한 후 Rapid Thermal Process(RTP)를 이용하여 소성 공정 조건을 변화시켰다. 소성 조건 동안 형성되는 후면 전계층은 peak 온도와 승온속도, 냉각 속도에 따라 형상이나 특성이 변화하기 때문에 소성 조건을 변화시키며 국부적 후면 전계 형성의 최적화에 관한 연구를 수행하였다. 패이스트를 이용하여 SiNx를 식각 후 광학 현미경(Optical Microscopy)을 사용하여 SiNx의 식각 유무를 살펴보았고, RTP로 형성된 국부 전계층의 형성 두께, 주변 부분의 형상을 살피기 위해 도핑 영역을 혼합수용액으로 식각하여 주사 전자 현미경(SEM)을 이용하여 관찰 하였다. 또한 후면의 특성을 살펴보기 위해 분광 광도계(UV/VIS/NIR Spectrophotometer)를 사용하여 후면 SiNx층의 유무에 따른 반사도를 비교, 측정 하였다.

• 제어로봇시스템학회논문지
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• 제6권9호
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• pp.831-835
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• 2000

The uniformity of themperature on a wafer is a wafer is one the most important parameters to conterol the RTF(Rapid Thermal Process) with proper input signals. It is impossible to achieve the uniformity of temperature without the exact estimation of temperature ar all points on the wafer. There fore, it is difficult to understand the internal dynamics as well as the structural complexities of the RTP, which is aprimary obstacle to measure the distributed temperatures on the wafer accurately. Furthermore, it is also hard to accomplish desirable estimation because only a few pyrometers are available in the general equipments. In the paper, a thermal model based on the chamber grometry of the AST SHS200 RTP system is developed to effectively control the thermal uniformity on the wafer. First of all, the estimation method of one-point measurement is developed, which is properly extended to the case of multi-point measurements. This thermal model is validated through simulation and experiments. The proposed work can be utilized to building a run-by -run or a real-time control of the RTP.

• 한국자기학회지
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• 제25권2호
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• pp.47-51
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• 2015

이 연구에서는 DC스퍼터링(DC Magnetron Sputtering)방식으로 제작 된 MgO 터널 장벽층을 갖는 자기터널접합을 급속 열처리 방식(Rapid Thermal Annealing)을 이용하여 열처리 공정 중의 구조적, 조성적 변화 및 스핀 수송 특성의 변화를 연구하였다. 본 연구를 통하여 급속 열처리 방식이 기존 일반적인 열처리 방식에 비하여 높은 터널링자기저항비를 얻을 수 있다는 것을 발견하였다. 또한, 열처리 시간의 단축을 통하여 Mn, Ta, Ru 등의 내부물질의 인접한 층으로의 확산을 억제할 수 있다는 것을 알 수 있었다. 유의미한 데이터를 수집하기 위하여 다양한 열처리 온도 조건과 시간조건에서 급속 열처리를 실시 한 후 자기 터널 접합의 전, 자기적 특성을 관찰하였다. 이러한 특성 변화는 향후 보다 우수하고 안정적인 자기적 특성과 열적 안정성을 갖는 자기터널접합 제작을 위해 다양하게 응용될 수 있다고 생각된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.267-270
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• 2004

In Micro injection process, it is needed to the technique of making micro die, Rapid Thermal Pressing (RTP) and other techniques. Those techniques are independent. But the mutual connected system of techniques is needed. The target of this paper is the design of micro mold and the development of the entire micro injection techniques for functional polymer.

• 한국표면공학회지
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• 제55권6호
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• pp.308-318
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• 2022

The surface modification and treatment using thermal plasma were reviewed in academic fields. In general, thermal plasma is generated by direct current (DC) and radiofrequency (RF) power sources. Thermal spray coating, a typical commercial process using thermal plasma, is performed by DC thermal plasma, whereas other promising surface modifications have been reported and developed using RF thermal plasma. Beyond the thermal spray coating, physical and chemical surface modifications were attempted widely. Superhydrophobic surface treatment has a very high industrial demand particularly. Besides, RF thermal plasma system for large-area film surface treatment is being developed. Thermal plasma is especially suitable for the surface modification of low-dimensional nanomaterial (e.g., nanotubes) by utilizing high temperature and rapid quenching. It is able to synthesize and modify nanomaterials simultaneously in a one-pot process.

• 열처리공학회지
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• 제30권4호
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• pp.151-155
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• 2017

The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.