• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.178-184
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• 2018

In the present study, $TiB_2-Co$ composite coatings were thermally sprayed onto the surface of a 304 stainless steel substrate using an atmospheric plasma spray (APS). The phase analysis of the powders and plasma-sprayed coatings was performed using X-ray diffractometry analysis. The microstructures of the coatings were studied by a scanning electron microscope (SEM). The average particle size and flowability of the feedstocks were also measured. Both $TiB_2-32Co$ and $TiB_2-45Co$ (wt.%) coatings possessed typical dense lamellar structures and high-quality adhesion to the substrate. The oxidation behaviors of the coatings were studied at $900^{\circ}C$ in an atmospheric environment. In addition, the cross-sectional images of the oxidized coatings were analyzed by SEM. A thin and well-adhered layer was formed on the surface of both $TiB_2-Co$ coatings, confirming satisfactory high-temperature oxidation resistance. The kinetic curves corresponding to the isothermal oxidation of the coatings illustrated a short transient stage from rapid to slow oxidation during the early portion of the oxidation experiment.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.1-7
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• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• The Journal of Korean Academy of Prosthodontics
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• v.53 no.3
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• pp.198-206
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• 2015

Purpose: We aimed to investigate the effect of combined various microgrooves and thermal oxidation on the titanium (Ti) and to evaluate various in vitro responses of human periodontal ligament cells (PLCs). Materials and methods: Grade II titanium disks were fabricated. Microgrooves were applied on titanium discs to have $0/0{{\mu}m}$, $15/3.5{{\mu}m}$, $30/10{{\mu}m}$, and $60/10{{\mu}m}$ of respective width/depth by photolithography. Thermal oxidation was performed on the microgrooves of Ti substrata for 3 h at $700^{\circ}C$ in air. The experiments were divided into 3 groups: control group (ST), thermal oxidation group (ST/TO), and combined microgrooves and thermal oxidation group (Gr15-TO, Gr30-TO, Gr60-TO). Surface characterization was performed by field-emission scanning microscopy. Cell adhesion, osteoblastic differentiation, and mineralization were analyzed using the bromodeoxyurdine (BrdU), Alkaline phosphatase (ALP) activity, and extracellular calcium deposition assays, respectively. Statistical analysis was performed using the oneway analysis of variance and Pearson's bivariate correlation analysis (SPSS Version 17.0). Results: In general, the combined microgrooves and thermal oxidation group (Gr15-TO, Gr30-TO, Gr60-TO) showed significantly higher levels compared with the control (ST) or thermal oxidation (ST-TO) groups in the BrdU expression, ALP activity, and extracellular calcium deposition. Gr60-TO group induced highest levels of cell adhesion and osteoblastic differentiation. Conclusion: Within the limitation of this study, we conclude that the Ti surface treatment using combined microgrooves and thermal oxidation is highly effective in inducing the cell adhesion andosteoblastic differentiation. The propose surface is also expected to be effective in inducing rapid and strong osseointegration of Ti oral implants.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1051-1059
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• 1988

In this study, we developed a proto-type RTP equipment by using tungsten halogen lamps. The system has been designed utilizing the result of the numerical analysis of the reactor. In order to analyze the system performance, experiments for activation of implanted atoms and oxidation process were performed. As a result, we obtained 2-3% uniformity in sheet resistance and 2-4% uniformity in oxide thickness, although after a long time process at high temperatures slip lines and warpage of the wafer have been observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.27-28
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• 2001

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.675-678
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• 2003

본 논문에서는 N-type 기판에서 Nickel-Silicide를 적용하였을 경우에 나타나는 문제점과 PAI (Pre-amorphization Implant)의 효과에 대하여 알아보았다. N-type 기판에 RTP (Rapid Thermal Process)를 통하여 Nickel-Silicide 를 형성하게 되는데, 여기까지는 안정한 Nickel mono-Silicide (NiSi)가 형성됨을 확인하였다. 하지만 후속 열처리 공정 후 심한 응집 현상 (Agglomeration)과 이상 산화 현상 (Abnormal Oxidation Phenomenon), Silicide Island 등 열안정성 (Thermal Stability) 측면에서 여러 가지 많은 문제점들이 나타났다. 이 후속 열처리의 열안정성 취약점들을 극복하는 방안으로 Ge 및 N₂ PAI를 적용하였다. PAI를 적용하였을 경우에는 그렇지 않은 경우에 비하여 고온 열처리 후에도 면저항이 비교적 잘 유지되었으며, 두께가 얇고 안정한 Nickel-Silicide 특성을 확보할 수 있었다. 특히 Ge PAI 에 비하여 N₂ PAI 의 경우가 보다 특성 개선 효과가 크게 나타났다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.