• 한국세라믹학회지
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• 제55권2호
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• pp.178-184
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• 2018

In the present study, $TiB_2-Co$ composite coatings were thermally sprayed onto the surface of a 304 stainless steel substrate using an atmospheric plasma spray (APS). The phase analysis of the powders and plasma-sprayed coatings was performed using X-ray diffractometry analysis. The microstructures of the coatings were studied by a scanning electron microscope (SEM). The average particle size and flowability of the feedstocks were also measured. Both $TiB_2-32Co$ and $TiB_2-45Co$ (wt.%) coatings possessed typical dense lamellar structures and high-quality adhesion to the substrate. The oxidation behaviors of the coatings were studied at $900^{\circ}C$ in an atmospheric environment. In addition, the cross-sectional images of the oxidized coatings were analyzed by SEM. A thin and well-adhered layer was formed on the surface of both $TiB_2-Co$ coatings, confirming satisfactory high-temperature oxidation resistance. The kinetic curves corresponding to the isothermal oxidation of the coatings illustrated a short transient stage from rapid to slow oxidation during the early portion of the oxidation experiment.

• 대한전자공학회논문지
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• 제27권5호
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• 센서학회지
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• 제11권3호
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• pp.163-170
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• 2002

본 논문에서는 양극반응과 복합 산화법($H_2O/O_2$ 분위기에서 $500^{\circ}C$, 1시간 열산화와 $1050^{\circ}C$, 2분간 RTO(Rapid Thermal Oxidation) 공정)을 이용한 두꺼운 OPSL(Oxidized Porous Silicon Layer)을 형성하여 이를 마이크로머시닝 기술을 이용함으로써 $10\;{\mu}m$ 두께의 OPS(Oxidized Porous Silicon) 에어 브리지를 제조하고, 그 위에 전송선로를 형성하여 그 RF 특성을 조사하였다. OPS 에어 브리지 위에 형성된 CPW(Coplanar Waveguide)의 손실이 OPSL 위에 형성된 전송선의 삽입손실보다 약 2dB 정도 적은 것을 보여주었으며, 반사손실은 OPSL 위에 형성된 전송선의 반사손실보다 적으며 약 -20 dB를 넘지 않고 있다. 본 연구에서 개발한 산화된 다공질 실리콘 멤브레인 및 에어 브리지 구조는 CMOS 공정 후에 사용 가능하며, 초고주파 회로 설계시 편리성과 유용성을 제시하고 있다.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.1-7
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• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• 대한치과보철학회지
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• 제53권3호
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• pp.198-206
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• 2015

목적: 다양한 크기의 마이크로그루브가 형성된 티타늄 표면에 열산화 처리를 한 복합 표면의 표면특성을 규명하고, 인간치주인대세포 배양 시 표면에 따른 다양한 세포행동들간 차이와 상관관계를 분석하고자 하였다. 재료 및 방법: Grade II 티타늄 디스크를 시편으로 제작하였다. 포토리소그라피를 이용하여 티타늄 시편의 마이크로그루브 크기를 폭/깊이 $0/0{{\mu}m}$, $15/3.5{{\mu}m}$, $30/10{{\mu}m}$, $60/10{{\mu}m}$로 각각 형성하였다. 평활한 티타늄 표면인 대조군(ST)을 제외한 모든 실험군(ST/TO, Gr15-TO, Gr30-TO, Gr60-TO)에 $700^{\circ}C$에서 3시간동안 열산화 처리하고, 주사현미경 사진을 사용하여 표면특성을 평가하였다. 인간치주인대세포를 배양한 후 BrdU (Bromdeoxyuridine) 실험, 알칼리성 인산가수분해효소 활성 실험, 세포외 칼슘 침착 실험을 통해 세포접착, 세포분화 및 골광화를 평가하였다. 통계분석으로는 일요인분산분석과 피어슨상관관계분석(SPSS version 17.0)을 사용하였다. 결과: 열산화를 동반한 마이크로그루브가 형성된 실험군(Gr15-TO, Gr30-TO, Gr60-TO)들은 평활한 대조군(ST)과 단순 열산화 처리 실험군(ST-TO)에 비하여 BrdU 실험, 알칼리성 인산가수분해효소 활성 실험, 세포 외 칼슘 침착 실험 모두에서 유의하게 증가된 활성도를 나타내었다. 특히, Gr60-TO군은 대조군 및 Gr15-TO, Gr30-TO, Gr60-TO 군 등에 비해 가장 증진된 세포접착 및 골아세포분화/골광화를 나타냈다. 결론: 본 연구의 한계 내에서, 열산화 처리 및 마이크로그루브 복합 티타늄 표면은 골아세포분화에 효과적 방법임이 확인되었다. 본 연구에서 규명 된 적정한 마이크로그루브 크기와 열산화 처리 조건은 마이크로그루브-열산화 복합 표면 티타늄 임플란트 개발의 기초 확립에 기여할 수 있을 것이다.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1051-1059
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• 1988

In this study, we developed a proto-type RTP equipment by using tungsten halogen lamps. The system has been designed utilizing the result of the numerical analysis of the reactor. In order to analyze the system performance, experiments for activation of implanted atoms and oxidation process were performed. As a result, we obtained 2-3% uniformity in sheet resistance and 2-4% uniformity in oxide thickness, although after a long time process at high temperatures slip lines and warpage of the wafer have been observed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.27-28
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• 2001

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.675-678
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• 2003

본 논문에서는 N-type 기판에서 Nickel-Silicide를 적용하였을 경우에 나타나는 문제점과 PAI (Pre-amorphization Implant)의 효과에 대하여 알아보았다. N-type 기판에 RTP (Rapid Thermal Process)를 통하여 Nickel-Silicide 를 형성하게 되는데, 여기까지는 안정한 Nickel mono-Silicide (NiSi)가 형성됨을 확인하였다. 하지만 후속 열처리 공정 후 심한 응집 현상 (Agglomeration)과 이상 산화 현상 (Abnormal Oxidation Phenomenon), Silicide Island 등 열안정성 (Thermal Stability) 측면에서 여러 가지 많은 문제점들이 나타났다. 이 후속 열처리의 열안정성 취약점들을 극복하는 방안으로 Ge 및 N₂ PAI를 적용하였다. PAI를 적용하였을 경우에는 그렇지 않은 경우에 비하여 고온 열처리 후에도 면저항이 비교적 잘 유지되었으며, 두께가 얇고 안정한 Nickel-Silicide 특성을 확보할 수 있었다. 특히 Ge PAI 에 비하여 N₂ PAI 의 경우가 보다 특성 개선 효과가 크게 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.