• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.370-376
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• 2020

In this study, we consider a group-based random access method for group connection and delivery by grouping devices when H2H devices and large-scale M2M devices coexist in a cell in NB-IoT environment. H2H devices perform individual random access, but M2M devices are grouped according to a NPRACH transmission period, and a leader of each group performs random access. The preamble is allocated using the variable preamble allocation algorithm of the Disjoint Allocation(DA) method. The proposed preamble allocation algorithm is an algorithm that preferentially allocates preambles that maximizes throughput of H2H to H2H devices and allocates the rest to M2M devices. The access distribution of H2H and M2M devices was set as Poisson distribution and Beta distribution, respectively, and throughput, collision probability and resource utilization were analyzed. As the random access transmission slot is repeated, the proposed preamble allocation algorithm decreases the collision probability from 0.93 to 0.83 and 0.79 when the number M2M device groups are 150. In addition, it was found that the amount of increase decreased to 33.7[%], 44.9[%], and 48.6[%] of resource used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.699-708
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• 1990

This paper proposes two test procedures for detecting functional faults in semiconductor random access memories (RAM's) and a new testimg scheme to execute the proposed test procedures. The first test procedure detects stuck-at faults, coupling faults and decoder faults, and requires 19N operations, which is an improvement over conventional procedures. The second detects restricted patternsensitive faults and requires 69N operations. The proposed scheme uses Built-In Self Testing (BIST) techniques. The scheme can write into more memory cells than I/O pins can in a write cycle in test mode. By using the scheme, the number of write operations is reduced and then much testing time is saved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.268-273
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• 2014

The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.110-110
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• 2009

최근 차세대 비휘발성 메모리(NVM) 기술은 메모리의 성능과 기존의 한계점을 효과적으로 극복하며 활발한 연구를 통해 비약적으로 발전하고 있으며 특히, phase-change random access memory (PRAM)은 ferroelectric random access memory (FeRAM)과 magneto-resistive random access memory (MRAM)과 같은 다른 NVM 소자와 비교하여 기존의 DRAM과 구조적으로 비슷하고 상용화가 빠르게 진행될 수 있을 것으로 예상되는 바, PRAM에 사용되는 상변화 물질의 식각을 수행하고 X-ray photoelectron spectroscopy (XPS)를 통해 표면의 열화현상을 관찰하였다.

• ETRI Journal
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• v.31 no.2
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• pp.151-161
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• 2009

In this paper, we propose an adaptive multiview video coding scheme based on spatiotemporal correlation analyses using hierarchical B picture (AMVC-HBP) for the integrative encoding performances, including high compression efficiency, low complexity, fast random access, and view scalability, by integrating multiple prediction structures. We also propose an in-coding mode-switching algorithm that enables AMVC-HBP to adaptively select a better prediction structure in the encoding process without any additional complexity. Experimental results show that AMVC-HBP outperforms the previous multiview video coding scheme based on H.264/MPEG-4 AVC using the hierarchical B picture (MVC-HBP) on low complexity for 21.5%, on fast random access for about 20%, and on view scalability for 11% to 15% on average. In addition, distinct coding gain can be achieved by AMVC-HBP for dense and fast-moving sequences compared with MVC-HBP.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.1
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• pp.104-106
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• 2016

In this letter, we consider a random access scheme for underwater acoustic network, in which a slotted ALOHA with variable slot length is designed to enhance the random access performance for the nodes with the varying propagation delay.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.156-157
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• 2007

For tens of years many advantages of Phase-Change Random Access Memory(PRAM) were introduced. Although the performance improved gradually, there are some portions which must be improved. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material to improve phase transition characteristic. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb.