Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
- /
- Pages.69-70
- /
- 2006
Electrical characteristic of Phase-change Random Access Memory with improved bottom electrode structure
하부전극 구조 개선에 의한 상변화 메모리의 전기적 특성
- Kim, Hyun-Koo (Dept. of Electronic Materials Eng.) ;
- Choi, Hyuk (Dept. of Electronic Materials Eng.) ;
- Cho, Won-Ju (Dept. of Electronic Materials Eng.) ;
- Chung, Hong-Bay (Dept. of Electronic Materials Eng.)
- 김현구 (광운대학교 전자정보공과대학 전자재료공학과) ;
- 최혁 (광운대학교 전자정보공과대학 전자재료공학과) ;
- 조원주 (광운대학교 전자정보공과대학 전자재료공학과) ;
- 정홍배 (광운대학교 전자정보공과대학 전자재료공학과)
- Published : 2010.04.01
Abstract
A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.
Keywords