JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Finite Element Model for Bipolar Resistive Random Access Memory

  • Kim, Kwanyong (Department of Electronic Engineering, Sogang University) ;
  • Lee, Kwangseok (Department of Electronic Engineering, Sogang University) ;
  • Lee, Keun-Ho (Department of Electronic Engineering, Sogang University) ;
  • Park, Young-Kwan (Department of Electronic Engineering, Sogang University) ;
  • Choi, Woo Young (Department of Electronic Engineering, Sogang University)
  • Received : 2014.01.17
  • Accepted : 2014.04.29
  • Published : 2014.06.30
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Abstract

The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.

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References

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