• 한국정보전자통신기술학회논문지
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• 제13권5호
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• pp.370-376
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• 2020

본 연구에서는 NB-IoT 환경에서 한 셀에 H2H 단말과 대규모의 M2M 단말이 공존하는 경우, 단말들을 그룹화하여 그룹 연결과 전달을 하는 그룹 기반 랜덤 액세스 방법을 고려한다. H2H 단말들은 개별 랜덤 액세스를 하지만 M2M 단말들은 NPRACH 전송주기에 따라 그룹화 하고, 각 그룹의 리더가 그룹 기반 랜덤 액세스를 수행한다. 비 결합 할당 방식(DA)으로 프리앰블을 할당하는데, H2H 단말의 처리량을 최대로 하는 프리앰블을 우선적으로 H2H 단말에 할당해 주고, 나머지를 M2M 단말에 할당해 주는 가변 프리앰블 할당 알고리즘을 제시하였다. H2H와 M2M 단말들의 접속 분포는 각각 포아송 분포와 베타 분포로 설정하여, 처리량, 충돌확률 그리고 자원 사용률로 분석한다. 랜덤 액세스 전송 슬롯이 반복됨에 따라 제안된 프리앰블 할당 알고리즘은 M2M 그룹 수가 150인 경우, 충돌확률을 0.93에서 0.83 그리고 0.79 로 감소함을 알 수 있었으며, 자원의 사용률이 33.7[%], 44.9[%], 48.6[%]로 증가의 폭이 줄어드는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• 대한전자공학회논문지
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• 제27권5호
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• pp.699-708
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• 1990

This paper proposes two test procedures for detecting functional faults in semiconductor random access memories (RAM's) and a new testimg scheme to execute the proposed test procedures. The first test procedure detects stuck-at faults, coupling faults and decoder faults, and requires 19N operations, which is an improvement over conventional procedures. The second detects restricted patternsensitive faults and requires 69N operations. The proposed scheme uses Built-In Self Testing (BIST) techniques. The scheme can write into more memory cells than I/O pins can in a write cycle in test mode. By using the scheme, the number of write operations is reduced and then much testing time is saved.

• 한국결정성장학회지
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• 제14권2호
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.268-273
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• 2014

The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.110-110
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• 2009

최근 차세대 비휘발성 메모리(NVM) 기술은 메모리의 성능과 기존의 한계점을 효과적으로 극복하며 활발한 연구를 통해 비약적으로 발전하고 있으며 특히, phase-change random access memory (PRAM)은 ferroelectric random access memory (FeRAM)과 magneto-resistive random access memory (MRAM)과 같은 다른 NVM 소자와 비교하여 기존의 DRAM과 구조적으로 비슷하고 상용화가 빠르게 진행될 수 있을 것으로 예상되는 바, PRAM에 사용되는 상변화 물질의 식각을 수행하고 X-ray photoelectron spectroscopy (XPS)를 통해 표면의 열화현상을 관찰하였다.

• ETRI Journal
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• 제31권2호
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• pp.151-161
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• 2009

In this paper, we propose an adaptive multiview video coding scheme based on spatiotemporal correlation analyses using hierarchical B picture (AMVC-HBP) for the integrative encoding performances, including high compression efficiency, low complexity, fast random access, and view scalability, by integrating multiple prediction structures. We also propose an in-coding mode-switching algorithm that enables AMVC-HBP to adaptively select a better prediction structure in the encoding process without any additional complexity. Experimental results show that AMVC-HBP outperforms the previous multiview video coding scheme based on H.264/MPEG-4 AVC using the hierarchical B picture (MVC-HBP) on low complexity for 21.5%, on fast random access for about 20%, and on view scalability for 11% to 15% on average. In addition, distinct coding gain can be achieved by AMVC-HBP for dense and fast-moving sequences compared with MVC-HBP.

• 한국통신학회논문지
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• 제41권1호
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• pp.104-106
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• 2016

본 논문은 수중 채널에서 서로 상이한 전달 지연시간의 분포를 갖는 노드들이 혼재한 상황에서 랜덤 액세스 슬롯의 크기를 다르게 설정하여 랜덤 액세스 성능을 향상시키는 방법을 제안한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.156-157
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• 2007

For tens of years many advantages of Phase-Change Random Access Memory(PRAM) were introduced. Although the performance improved gradually, there are some portions which must be improved. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material to improve phase transition characteristic. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb.