• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.192-193
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• 2005

Magnesium thin films were prepared on cold-rolled steel substrates by RF(Radio Frequency) magnetron sputtering technique.$^{1)}$ The crystal orientation and monitoring of the deposited films were investigated by using XRD(X-ray Diffraction) and EIS(Electrochemical Impedance Spectroscopy), respectively. The corrosion rates of Mg thin films deposited with different argon gas pressure and substrate bias voltage were monitored by AC impedance method under a cyclic wet-dry condition, which was conducted by exposure to alternate conditions of 1h immersion in 3%NaCl solution and 5h drying at 60% RH and 25$^{\circ}C$. The result of corrosion rate of Mg thin films deposited at various Ar gas pressures and substrate bias voltage under wet-dry cyclic exposure in chloride-containing solutions was showed the following conclusions. At the region I during the onset of the wet cycle, corrosion rate showed relatively low value. The increase in the Corrosion rate of region II is due to the increase in the chloride concentration. Corrosion rate of region III during the onset of the cycle zero and salt crystals remain on the metal surface.$^{2)}$

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.185-188
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• 2009

The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.318-324
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• 2007

We report on a strong violet luminescence emitted from the ZnO:Al films grown on glass substrate by radio-frequency magnetron sputtering. The growth of high-quality thin films and their optical properties are controlled by adjusting the mixture ratio of Ar and $O_2$, which is used as the sputtering gas. The crystallinity of the films is improved as the oxygen flow ratio is decreased, as evidenced in both x-ray diffractometer and atomic force microscope measurements. As for the violet luminescence measured by photoluminescence (PL) spectroscopy, the peak energy and intensity of the PL signal are decreased with increasing the oxygen flow ratio. The peak energy of the violet PL spectrum for the thin film with an oxygen flow ratio of 50 % is almost constant, regardless of the increase of laser Power and temperature. These results indicate that the violet PL signal is probably due to defects related to interstitial Zn atoms.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Journal of Integrative Natural Science
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• v.9 no.4
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• pp.223-227
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• 2016

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.246-250
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• 2000

Reactive radio frequency (RF)magnetron sputter has been used to deposit AlN thin film on a Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure and high $\textrm{N}_2$ concentration. Also it has been shown that properties of AlN thin film are affected by presputtering time. As presputtering time increased aluminum and nitride concentration of AlN thin film decreased. But oxygen concentration and grain size increased. The good preferred orientation was shown with the short presputtering time.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.