Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Influence of Substrate Bias Voltage on the Electrical and Optical Properties of IWO Thin Films

기판 인가 전압에 따른 IWO 박막의 전기적, 광학적 특성

  • Jae-Wook Choi (School of Materials Science and Engineering, University of Ulsan) ;
  • Yeon-Hak Lee (School of Materials Science and Engineering, University of Ulsan) ;
  • Min-Sung Park (School of Materials Science and Engineering, University of Ulsan) ;
  • Young-Min Kong (School of Materials Science and Engineering, University of Ulsan) ;
  • Daeil Kim (School of Materials Science and Engineering, University of Ulsan)
  • 최재욱 (울산대학교 첨단소재공학부) ;
  • 이연학 (울산대학교 첨단소재공학부) ;
  • 박민성 (울산대학교 첨단소재공학부) ;
  • 공영민 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2023.07.14
  • Accepted : 2023.09.15
  • Published : 2023.09.27
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Abstract

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2/Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

Keywords

Acknowledgement

This work was supported by the 2023 Research Fund of University of Ulsan.

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