• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.9
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• pp.1248-1252
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• 2014

In this study, we designed a signal processing module using a radiation hardened technology that can be applied to the all measurement sensors inside nuclear power plant containment. Also, for verification that it can be used for high-level radiation environment (Harsh environmental zone inside containment of NPP), we carried out evaluation tests for a designed module using a $Co^{60}$ gamma-ray source up to 12 kGy(Si). And, we had checked radiation hardening level that it has been satisfied up to 12 kGy(Si).

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.189-194
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• 2024

This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO₂) at a rate of 10.46 kGy (SiO₂)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1405-1410
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• 2015

In this study we designed the radiation-hardened sensor signal processing modules that can be commonly used for a variety of sensors during normal operation and even in high-radiation environments caused by an accident. First development module was designed to receive the change of the R and C value from the sensors and to process the signal as a PWM modulation scheme. This module was assessed to have ± 10% error to the Full-Scale in the radiation test in the range of 12 kGy TID. The main cause of the error was analyzed as the annealing of the common circuit in the switching element and the consequent increase in the duty ratio of the pulse width modulation circuit according to the radiation dose increasement. The redesigned module for higher radiation resistivity with Stub transistor circuit was found to have less than 5% error to the Full-scale from the radiation test results for 20.7 kGy TID range.

• Journal of Semiconductor Engineering
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• v.2 no.1
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• pp.119-124
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• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2287-2292
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• 2012

In this study, $Co^{60}$ gamma-ray induced loss on Ge-doped single mode (SM) fiber has been measured. Gamma-ray is irradiated for 4 hours at the dose rate of 0.5 kGy/hr, 2 kGy/hr, 8 kGy/hr. Consequently, gamma-ray induced loss based on radiation effects in Ge-doped SM fiber occur significantly. Furthermore, dose rate effect was observed, that dose rate using the same total dose increased higher, then optical fiber loss increased more. Also annealing effect was observed, that the loss after irradiation, increased higher, then the recovery rate of loss was increased. This results are foreseen to be base data in the future radiation-hardened optical fiber study.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.4191-4203
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• 2023

Robotics applications are greatly needed in hazardous locations, e.g., fusion and fission reactors, where robots must perform delicate and complex tasks under ionizing radiation conditions. The drawback is that some robotic parts, such as active electronics, are susceptible to radiation. It can lead to unexpected failures and early termination of the robotic operation. This paper analyses the ionizing radiation effect from 0.09 to 1.5 Gy/s in robotic components (microcontrollers, servo motors and temperature sensors). The first experiment compares the performance of various microcontroller types and their actuators and sensors, where different mitigation strategies are applied, such as using Radiation-Hardened (Rad-Hard) microcontrollers or shielding. The second and third experiments analyze the performance of a 3-Degrees of Freedom (DoF) robotic arm, evaluating its components' responses and trajectory. This study enhances our understanding and expands our knowledge regarding radiation's impact on robotic arms and components, which is useful for defining the best strategies for extending the robots' operational lifespan, especially when performing maintenance or inspection tasks in radiation environments.