• Title/Summary/Keyword: RF-MEMS 스위치

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Design of a Reconfigurable Slot Antenna using Sequentially Voltage-Applied RF MEMS Switches (순차적으로 전압 인가된 RF MEMS스위치를 이용한 재구성 슬롯 안테나의 설계)

  • Shim, Joon-Hwan;Yoon, Dong-Sik;Park, Dong-Kook;Kang, In-Ho;Jung-Chih Chiao
    • Journal of Navigation and Port Research
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    • v.28 no.5
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    • pp.429-434
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    • 2004
  • In this paper, we designed a reconfigurable slot antenna using sequentially voltage-applied RF MEMS switches. In order to obtain pull-in voltage and maximum stress of the MEMS switches, the switch structures in accordance with airgap height was analyzed by ANSYS simulation A actuation voltage of MEMS switches can be determined by switch geometry and airgap height between a movable plate and a bottom plate. The designed lengths of MEMS switches were 240 $\mu\textrm{m}$, 320 $\mu\textrm{m}$, 400 $\mu\textrm{m}$, respectively and the airgap was 6$\mu\textrm{m}$. The total size of the designed slot antenna was 10 mm x 10 mm and the slot length and width were 500 $\mu\textrm{m}$ and 200 $\mu\textrm{m}$, respectively. The length and size of the CPW feedline were 5 mm and 30-80-30 $\mu\textrm{m}$, respectively. and then the size of the CPW in the slot was 50-300-150 $\mu\textrm{m}$. The tuning of the resonant frequency of the proposed device is realized by varying the electrical length of the antenna, which is controlled by applying the DC bias voltages to the RF MEMS switches. The designed slot antenna has been simulated, fabricated and measured.

A Study on RF MEMS Switch with Comb Drive (Comb drive를 이용한 RF MEMS 스위치에 관한 연구)

  • Kang, Sung-Chan;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.4
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    • pp.7-12
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    • 2008
  • This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.

RF MEMS Passives for On-Chip Integration (단일칩 집적화를 위한 RF MEMS 수동 소자)

  • 박은철;최윤석;윤준보;하두영;홍성철;윤의식
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.2
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    • pp.44-52
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    • 2002
  • 본 논문에서는 RF와 마이크로파 응용을 위한 MEMS 수동 소자에 대한 내용이다. 이 수동 소자들을 만들기 위해서 개발된 3타원 MEMS공정은 기존의 실리콘 공정과 완전한 호환성을 가지고 한 칩으로 집적화 시킬 수 있는 공정이다. 이 3차원 MEMS 공정은 기존 실리콘 긍정이 가지고 있는 한계를 극복하기 위한 방법으로써 개발되었다. 개발된 공정을 이용하여 실리콘 공정에서 구현할 수 없었던 좋은 성능의 인덕터, 트랜스포머 및 전송선을 RF와 마이크로파 응용을 위해서 구현하였다. 저 전압, 높은 차단율을 위한 push-pull 개념을 도입한 MEMS 스위치를 구현하였다. 또한 높은 Q를 갖는 MEMS 인덕터를 최초로 CMOS 칩과 집적화에 성공하여 600kHz 옵셋 주파수에서 -122 dBc/Hz의 특성을 갖는 2.6 GHz 전압 제어 발진기를 제작하였다.

Suppression of Microwelding on RF MEMS Direct Contact Switches (직접접촉식 RF MEMS 스위치에서의 미소용접 현상 억제)

  • Lee, Tae-Won;Kim, Seong-Jun;Park, Sang-Hyun;Lee, Ho-Young;Kim, Yong-Hyup
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.4
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    • pp.41-46
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    • 2005
  • In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

Low Actuation Voltage RF MEMS Switch (저전압 고주파 MEMS 스위치)

  • 서용교;최영식
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.5
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    • pp.1038-1043
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    • 2003
  • A capacitive-coupled configuration MEMS switch is designed and fabricated, and its characteristics are measured. Low actuation voltage has been achieved by means of small distance between signal line and membrane. Minimum actuation voltage is about 11V. Isolation is around 40dB and insertion loss is about 0.2dB at 2GHz.

Miniaturization Development of Transmit/Receive Module using a 10W MEMS switch (10W급 MEMS 스위치를 이용한 송수신모듈 소형화 개발)

  • Yi, Hui-min;Jun, Byoung-chul;Lee, Bok-hyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.12
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    • pp.2417-2424
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    • 2016
  • Small size and light weight is very important for components used in radar mounted platform such as airborne radar. Recently, the active phased array radar is developed as an array of antennas for thousands of transmit/receive modules to be used as a multi-function radar that can detect and track targets. In this case, the size and weight of the transmit/receive modules are critical factor for developing the radar. In this paper, we developed a compact transmit/receive module using the 10W RF MEMS switch domestically localizing and reduced the circuit area to about 86.5% compared to using a circulator. The developed module satisfies not only electrical requirements but also MIL-STD's environmental specifications. So it can be used in a military device. It can be used at adaptive tunable receivers, reconfigurable smart active antennas and wide band beam electrical steering antennas.

Package-type polarization switching antenna using silicon RF MEMS SPDT switches (실리콘 RF MEMS SPDT 스위치를 이용한 패키지 형태의 편파 스위칭 안테나)

  • Hyeon, Ik-Jae;Chung, Jin-Woo;Lim, Sung-Joon;Kim, Jong-Man;Baek, Chang-Wook
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1511_1512
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    • 2009
  • This paper presents a polarization switching antenna integrated with silicon RF MEMS SPDT switches in the form of a package. A low-loss quartz substrate made of SoQ (silicon-on-quartz) bonding is used as a dielectric material of the patch antenna, as well as a packaging lid substrate of RF MEMS switches. The packaging/antenna substrate is bonded with the bottom substrate including feeding lines and RF MEMS switches by BCB adhesive bonding, and RF energy is transmitted from signal lines to antenna by slot coupling. Through this approach, fabrication complexity and degradation of RF performances of the antenna due to the parasitic effects, which are all caused from the packaging methods, can be reduced. This structure is expected to be used as a platform for reconfigurable antennas with RF MEMS tunable components. A linear polarization switching antenna operating at 19 GHz is manufactured based on the proposed method, and the fabrication process is carefully described. The s-parameters of the fabricated antenna at each state are measured to evaluate the antenna performance.

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