• Journal of IKEEE
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• v.19 no.3
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• pp.371-377
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• 2015

This paper is about the RF transceiver designed and implementation for common data link. The trasmitter is configured as a frequency up-converter, a power amplifier and a duplexer. The receiver is configured as a duplxer, a frequency down-converter and a low noise amplifier. The maximum transmission distance, the reception sensitivity is designed to meet the electrical and temperature characteristics and the like. Using a modeling and simulation in order to meet the requirements of the RF transceiver has been designed and implemented. Transmitting output power and Noise Figure has been measured with 38.58dBm and 5.5dB, respectively. All of the electrical and temperature specifications was meet. Was confirmed all of the requirement specification by electrical characteristics test and temperature characteristics test.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.55-59
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• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.5
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• pp.35-41
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• 2004

In computational study on RF(Radio Frequency) plasmas, a 1D fluid models with an advantage of a short computational time are often adopted. However, in order to obtain realistic calculation results under a typical chamber geometry with unequal-sized electrodes, modeling of the plasma space is an issue to be investigated. In this paper, it is focused on that how much a 1D model can approximate a 2D model. 1D fluid models with unequal-sized electrodes, which have spherical and frustum geometry systems, were developed and their results were compared with those of 2D model with Gaseous Electronic Conference cell structure. Behavior of $N_2$ RF plasmas has been simulated using 1D and 2D fluid models and a technique to take account of unequal-sized electrodes in a 1D fluid models has been examined. Features of the plasma density and the electric potential were discussed as characteristic quantities representing the asymmetry of the chamber geometry.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.6
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• pp.635-644
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• 2003

To ensure the reliability of ultrasonic nondestructive testing techniques for modern structural materials, the effects of anisotropy and inhomogeneity and the influence of non-planar component geometries on ultrasonic wave propagation have to be taken into account. In this article, fundamentals and applications of two analytical approaches to three-dimensional elastic beam field calculation are presented. Results for both isotropic materials including curved interfaces and for anisotropic media like composites are presented, covering field profiles for various types of transducers and the modeling of time-dependent rf-signals.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.347-350
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• 2004

The substrate parameters of Si MOSFET equivalent circuit model were directly extracted from measured S-Parameters in the GHz region by using simple 2-port parameter equations. Using the above extract ion method, bias and gate length dependent curves of substrate parameters in the RF region are obtained by varying drain voltage at several short channel devices with various gate lengths. These extract ion data will greatly contribute to scalable RF nonlinear substrate modeling.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• ETRI Journal
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• v.33 no.1
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• pp.6-12
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• 2011

A case study of an active transmitting patch antenna revealed a characteristic loop locus of DC power versus RF output power as drive frequency was varied, with an operational bandwidth substantially smaller than the impedance bandwidth of the radiator. An approximate simulation technique, based on separation of the output capacitance of the power transistor, yielded easily visualized plots of power dependence on internal load impedance, and a simple interpretation of the experimental results in terms of a near-resonance condition between the output capacitance and output packaging inductance.

• Journal of Satellite, Information and Communications
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• v.12 no.4
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• pp.120-124
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• 2017

This paper describes the product of search and rescue system with dynamic model. This spread spectrum system based new standard of COSPAS-SARSAT is results of RF signal generation and transmission. we will test performance evaluation which implement signal process adapting Dynamic model and we will adapt the CAF model using TDOA and FDOA relationship.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.363-368
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• 2009

In the paper, we confirmed improvement Noise figure of the entire RF front-end using spiral inductor with PGS(Patterned Ground Shield) and current bleeding techniques. LNA design is to achieve simultaneous noise and input matching. Spiral inductor in input circuit of LNA inserted PGS for betterment of Q-factor. we modeling inductor using EM simulator, so compared with inductor of TSMC 0.18um. We designed and simulation the optimum structure of PGS using Taguchi's method. We confirmed enhancement of noise figure at LNA after substituted for inductor with PGS. Mixer designed using current bleeding techniques for reduced noise. We designed LNA using inductor with PGS and Mixer using current bleeding techniques, so confirmed improvement of noise figure.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.