• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1220-1228
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• 2010

In this paper, we suggest a scheme to develop an efficient discrete nonlinear model based on polynomial structure for a RF power amplifier(PA). We describe a procedure to extract a discrete nonlinear model such as Taylor series or memory polynomial by sampling the input and output signal of RF PA. The performance of the model is analyzed varying the model parameters such as sample rate, nonlinear order, and memory depth. The results show that the relative error of the model is converged if the parameters are larger than specific values. We suggest an efficient modeling scheme considering complexity of the discrete model depending on the values of the model parameters. Modeling efficiency index(MEI) is defined, and it is used to extract optimum values for the model parameters. The suggested scheme is applied to discrete modeling of various RF PAs with various input signals such as WCDMA, WiBro, etc. The suggested scheme can be applied to the efficient design of digital predistorter for the wideband transmitter.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.2 s.7
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• pp.23-31
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• 2005

ITS(Intelligent Transportation System) implementing information collection services and information support services for cars of moving fast needs a communication system of special aim such as RF-DSRC(Radio Frequency Dedicated Short Range Communication). Before RSE(Road Side Equipment) and OBE(On-Board Equipment) will be able to communicate RF-DSRC, OBE first have to request Link Initialization Access using ACTC(Activation Channel) in allocated ACTS(Activation Slot) by Slotted ALOHA. Even though Link Initialization Access is a important element to decide performance of communication system, optimal mathematic modeling study of Link Initialization Access which is adapted RF-DSRC characteristics is not enoush. So, in this paper, we propose mathematical modeling about Link Initialization Access of RF-DSRC. And then we computed Link Initialization Access probability defining offer load(G) which is adapted RF-DSRC characteristics for analyzing performance of modeling.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.1
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• pp.94-101
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• 2009

This paper presents scalable modeling of spiral inductors for RFIC design based on $0.13{\mu}m$ RF CMOS process. For scalable modeling, several inductor patterns are designed and fabricated with variations of width, number of turns and inner radius. Feeding structures are optimized for accurate de-embedding of pad effects. After measuring the S parameters of the fabricated patterns, double-$\pi$ equivalent circuit parameters are extracted for each device and their geometrical dependences are modeled as scalable functions. The inductor library provides two types of models including standard and symmetric inductors. Standard and symmetric inductors have the range of $0.12{\sim}10.7nH$ and $0.08{\sim}13.6nH$ respectively. The models are valid up to 30GHz or self-resonance frequency. Through this research, a scalable inductor library with an error rate below 10% is developed for $0.13{\mu}m$ RF CMOS process.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.1
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• pp.40-48
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• 2015

In this paper, we suggest a measurement modeling of the RF seeker using the ISAR(Inverse Synthetic Aperture Radar) image. Reference scattering points are extracted first from ISAR images which are changed according to target attitude. And then uncertainties included in RF seeker measurement such as noise strength, blink, and boresight error are added to the reference scattering points. The proposed measurement model of the RF seeker can be used to develop various kinds of target tracking algorithms.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.1-6
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• 2010

In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.21-27
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• 2015

An improved method based on direct extraction and simultaneous optimization is developed to determine model parameters of symmetric inductors fabricated by the high resistivity(HR) silicon-on-insulator(SOI) RF CMOS process. In order to improve modeling accuracy, several model parameters are directly extracted by Y and Z-parameter equations derived from two equivalent circuits of symmetric inductor and grounded center-tap one, and the number of unknown parameters is reduced using parallel resistance and total inductance equations. In order to improve optimization accuracy, two sets of measured S-parameters are simultaneously optimized while same model parameters in two equivalent circuits are set to common variables.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.88-93
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• 2007

In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.408-413
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• 2011

In this paper, a real-coefficient approach to Adaptive Frequency Sampling (AFS) technique is developed for efficient equivalent circuit modeling of RF components. This proposed method is advantageous than the vector fitting technique and the conventional AFS method in terms of fewer samples leading to a lower order of a rational function on a given data and to a direct conversion to an equivalent circuit for PSPICE(Personal Simulation Program with Integrated Circuit Emphsis) simulation, respectively. To validate the proposed method, the distributed equivalent circuit of a presented multi-layered RF low-pass filter is obtained using the proposed real-coefficient AFS, and then comparisons with EM simulation and circuit simulation for the device under consideration are achieved.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2002.11a
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• pp.363-370
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• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.