• Title/Summary/Keyword: RF magnetron sputtering method

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Electrical properties of ZnO/sapphire piezo-electric transducer by RF magnetron sputtering (RF magnetron sputtering으로 제작한 ZnO/sapphire 압전 변환기의 전기적인 특성에 관한 연구)

  • 이종덕;정규원;고상춘;송준태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.22-25
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    • 1995
  • In this paper, the physical characteristics of piezoelectric transducer which generates acoustic weve at microwave frequency were theoretically analized. We found that increasing electrode thickness is showed large distorthion on bandwidth. ZnO thin film were desposited by RF magnetron sputtering method. considering the sputtering parameters. Thickness of the desposited ZnO was 3.9 $\mu\textrm{m}$. In this experiment, we get that resistivity is 12.196${\times}$109 [cm$\Omega$], that resonance frequency is 827.47MHz Measuring insertion loss, we ascertained to possibility of transducer application for microwave frequency.

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Realization of p-type ZnO Thin Films Using Codoping N and Al by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Byung-Moon;Park, Bok-Kee;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.107-108
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    • 2006
  • ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

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Magnesium Thin Films Possessing New Corrosion Resistance by RF Magnetron Sputtering Method

  • Lee, M.H.;Yun, Y.S.;Kim, K.J.;Moon, K.M.;Bae, I.Y.
    • Corrosion Science and Technology
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    • v.3 no.4
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    • pp.148-153
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    • 2004
  • Magnesium thin flims were prepared on cold-rolled steel substrates by RF magnetron sputtering technique. The influence of argon gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. And the effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. From the experimental results, all the sputtered magnesium films showed obviously good corrosion resistance to compare with 99.99% magnesium target of the sputter-evaporation metal. Finally it was shown that the Corrosion-resistance of magnesium films can be improved greatly by controlling the crystal orientation and morphology with effective use of the plasma sputtering technique.

Effect of RF Power on the Structural, Optical and Electrical Properties of Amorphous InGaZnO Thin Films Prepared by RF Magnetron Sputtering (RF 마그네트론 스퍼터링으로 증착한 비정질 InGaZnO 박막의 구조적, 광학적, 전기적 특성에 미치는 RF 파워의 영향)

  • Shin, Ji-Hoon;Cho, Young-Je;Choi, Duck-Kyun
    • Korean Journal of Metals and Materials
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    • v.47 no.1
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    • pp.38-43
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    • 2009
  • To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

Field Electron Emission from Amorphous Carbon Thin Film Grown Using Rf Magnetron Sputtering Method (RF 마그네트론 스퍼터링법으로 성장된 Amorphous carbon 각막의 전계전자방출)

  • ;;K. Oura
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.234-240
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    • 2001
  • Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

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The Study of ZnO Thin Film for SAW Filter by PLD and RF Magnetron Sputtering (PLD와 RF 마그네트론 스퍼터링을 이용한 SAW 필터용 ZnO 박막의 특성 연구)

  • Lee, Seung-Hwan;Yu, Yun-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.12
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    • pp.979-983
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    • 2012
  • We proposed the ZnO thin film for a SAW filter by PLD and RF sputtering method. ZnO thin films was pre-deposited on a sapphire substrate as a seed layer by PLD method and then deposited on seed layer by RF sputtering. The surface characteristics of ZnO thin film were investigated by XRD, SEM and AFM. The minimum surface roughness was 1.92 nm and FWHM of rocking curve was $0.92^{\circ}$. We demonstrated the SAW filter with bandwidth of approximately 0.97 MHz and the center frequency of 18.72 MHz using the proposed ZnO thin film.

Deposition Characteristics of AlN Thin Films Prepared by RF Magnetron Sputtering (RF 마그네트론 스퍼터링에 의해 제조된 AlN 박막의 증착 특성)

  • Song, Jong-Han;Chun, Myoung-Pyo;Choi, Duck-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.12
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    • pp.969-973
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    • 2012
  • AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

Characteristics Of TiO$_2$ Optical Thin Films With Ag Content by RF Magnetron Co-sputtering Method (RF magnetron co-sputtering으로 제작한 TiO$_2$ 광학 박막의 Ag 함량에 따른 특성)

  • 김상철;김의정;한성홍
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.282-283
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    • 2003
  • TiO$_2$ 박막은 높은 굴절률과 유전 상수를 가지며, 가시광선과 근적외선 영역에서 우수한 투과성을 나타낸다. 따라서, 전기적, 광학적 특성이 우수한 광학코팅에 응용되고 있다. 또한 화학적으로 안정하고 비교적 큰 에너지 밴드 갭을 지닌 반도체 물질로서 유전체 다층 박막을 제작하는데 있어서 중요한 물질로 사용되고 있다. TiO$_2$ 박막을 제작하기 위한 물리적인 방법으로는 sputtering, anodic 또는 thermal, e-beam evaporation 등이 이용되고 있으며, sol-gel법, CVD 등과 같은 화학적인 방법도 이용되고 있다. (중략)

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Characteristics of Sputtering Carbon Films for the Improvement of Physical Properties in Carbon Fiber (탄소섬유 물리적 특성 향상을 위한 스퍼터링 탄소박막의 특성에 대한 연구)

  • Park, Chulmin;Park, Yong Seob;Kim, Jae-Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.11
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    • pp.694-697
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    • 2015
  • We investigated the characterizations of carbon films fabricated by dual magnetron sputtering under various RF powers for the improvement of physical properties in carbon fiber (CF). All sputtered carbon films exhibited amorphous structure, regardless of RF powers, resulting in uniform and smooth surfaces. The hardness and elastic modulus are increased with the increase of RF power, and the adhesion and friction properties of carbon films were improved with the increase of RF power. In the results, The increase of RF power in the sputtering method improved tribological properties of the carbon films, and these attributes can be expected to improve the physical properties of the carbon fiber reinforcement plastics.

Electrical and Optical Properties of SiO2-doped ZnO Films Prepared by Rf-magnetron Sputtering System (Rf-magnetron Sputtering 장치에 의해 제작된 SiO2가 도핑된 ZnO 박막의 전기적 및 광학적 특성)

  • Bae, Kang;Sohn, Sun-Young;Hong, Jae-Suk;Kim, Hwa-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.11
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    • pp.969-973
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    • 2009
  • In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.