한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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- Pages.107-108
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- 2006
Realization of p-type ZnO Thin Films Using Codoping N and Al by RF Magnetron Sputtering
- Jin, Hu-Jie (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
- So, Byung-Moon (Iksan National Coll.) ;
- Park, Bok-Kee (Howon Univ.) ;
- Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
- 발행 : 2010.04.01
초록
ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.