Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Deposition Characteristics of AlN Thin Films Prepared by RF Magnetron Sputtering

RF 마그네트론 스퍼터링에 의해 제조된 AlN 박막의 증착 특성

  • Song, Jong-Han (Nano IT Materials Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Chun, Myoung-Pyo (Nano IT Materials Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Duck-Kyun (Materials Science and Engineering, Hanyang University)
  • 송종한 (한국세라믹기술원 나노IT소재팀) ;
  • 전명표 (한국세라믹기술원 나노IT소재팀) ;
  • 최덕균 (한양대학교 신소재공학과)
  • Received : 2012.11.02
  • Accepted : 2012.11.24
  • Published : 2012.12.01
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Abstract

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

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