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http://dx.doi.org/10.4313/JKEM.2012.25.12.969

Deposition Characteristics of AlN Thin Films Prepared by RF Magnetron Sputtering  

Song, Jong-Han (Nano IT Materials Team, Korea Institute of Ceramic Engineering and Technology)
Chun, Myoung-Pyo (Nano IT Materials Team, Korea Institute of Ceramic Engineering and Technology)
Choi, Duck-Kyun (Materials Science and Engineering, Hanyang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.12, 2012 , pp. 969-973 More about this Journal
Abstract
AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.
Keywords
AlN; RF magnetron sputtering; X-ray diffraction; Preferential orientation;
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