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Effect of RF Power on the Structural, Optical and Electrical Properties of Amorphous InGaZnO Thin Films Prepared by RF Magnetron Sputtering  

Shin, Ji-Hoon (Department of Information Display Engineering, Hanyang University)
Cho, Young-Je (Department of Materials Science & Engineering, Hanyang University)
Choi, Duck-Kyun (Department of Materials Science & Engineering, Hanyang University)
Publication Information
Korean Journal of Metals and Materials / v.47, no.1, 2009 , pp. 38-43 More about this Journal
Abstract
To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.
Keywords
transparent oxide semiconductor; amorphous InGaZnO (a-IGZO); RF magnetron sputtering; RF power; thin film transistor;
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Times Cited By KSCI : 2  (Citation Analysis)
Times Cited By Web Of Science : 5  (Related Records In Web of Science)
Times Cited By SCOPUS : 5
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